2019
DOI: 10.1063/1.5127346
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A theoretical model of the thermoelectric properties of SnSxSe1−x and how to further enhance its thermoelectric performance

Abstract: Tin-based chalcogenides have a lot of potential as thermoelectric materials due to their ultralow thermal conductivity. Therefore, most reports on doped SnS focus on its power factor as the other condition for a high thermoelectric figure of merit (ZT). Here, we use the Boltzmann transport formalism to calculate both the power factor and the thermal conductivity for SnS, SnSe, and SnSxSe1−x and compare it with experimental measurements. Our theoretical model, based on a relaxation-time formalism, is in very go… Show more

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Cited by 30 publications
(18 citation statements)
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“…We also approximate the thermal conductivity using a model by Madsen et al 40 that operates within the relaxation-time approximation. The relaxation time is approximated by the contribution from umklapp anharmonic scattering processes parameterized as 4 , 28 …”
Section: Methodsmentioning
confidence: 99%
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“…We also approximate the thermal conductivity using a model by Madsen et al 40 that operates within the relaxation-time approximation. The relaxation time is approximated by the contribution from umklapp anharmonic scattering processes parameterized as 4 , 28 …”
Section: Methodsmentioning
confidence: 99%
“…To be able to perform this comparison, we also calculate the phonon contribution to thermal transport in these compounds. We start with ab initio calculations but also employ a simpler predictive model developed by some of us 4,32 to enable a more direct comparison of the key ingredients for thermal transport between the three structures. We find that along with its structure, the Janus SnSSe monolayer also inherits the main features of its phonon dispersion from its parent compounds.…”
Section: ■ Introductionmentioning
confidence: 99%
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“…The ternary alloys of the compounds have the tunable band gap that is critical for optical device applications. Thus far, only the basic properties of the ternary SnS 2-x Se x were reported [ 23 , 24 ]. Further investigations of SnS 2-x Se x as flexible sensors [ 25 ] and phototransistors [ 26 ] were also reported.…”
Section: Introductionmentioning
confidence: 99%
“…The electrical transport properties for all the three above-mentioned stoichiometries of SFMO were calculated by using Boltzmann transport equation as implemented in BoltzTraP2 considering rigid band approximation. , The total relaxation time was calculated based on scattering mechanism given in ref . In the relaxation time approximation, the generalized transport coefficients are calculated from the transport distribution function as In the above equation, v k is the component of the group velocity of each carrier in the transport direction, E k is the energy of that electronic state, and τ k is its total relaxation time.…”
mentioning
confidence: 99%