A thermally robust phase change memory by engineering the Ge/N concentration in (Ge, N)<inf>x</inf>Sb<inf>y</inf>Te <inf>z</inf> phase change material

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

“…In the same graph, data corresponding to conventional GST are also reported for sake of comparison. D-alloy and T-alloy results are among the best so far published on high temperature PCM [5][6][7][8][9][10]. The activation energy for crystallization has been evaluated for both compounds, by finding 3.45 eV and 4.30 eV for D-alloy and T-alloy respectively.…”

“…Several works have recently addressed the limited retention of Phase Change Memory by proposing material engineering or dopants inclusion [5][6][7][8][9][10], but no mainstream has still been found. This paper is focused on two specific compositions in the Ge-rich region, namely D-alloy and T-alloy, whose crystallization temperature is respectively 250°C and 350°C, so definitely higher than reference GST.…”

Quantifying nitrogen in GeSbTe:N alloys

“…GeSbTe (GST) is an interesting material that is already being used in non-volatile memory devices: 1,2 nitrogen "doping" is used to increase both device reliability 3 and performance, 4 enabling signicant applications in the automotive sector 5,6 with an enhanced stability up to 240 C. 7 We report here on metrology issues impacting the robustness of the process, including both technology transfer between multiple fabrication sites and the establishment of reliable calibration protocols.…”

Emerging Memory Technologies: Recent Trends and Prospects

“…The GST material systems can further be tuned for device characteristics that are of interest. For example, Ge-rich GST (N-doped) could be used to achieve better data retention for high temperature automotive applications [13]. The PCRAM's on/off resistance ratio is much larger (in the range of 100-1,000×) than STT-MRAM.…”