A Thermoelectric Generator Concept Using a p–n Junction: Experimental Proof of Principle

Becker, A.; Chavez, Ruben; Petermann, Nils; Schierning, Gabi; Schmechel, Roland

doi:10.1007/s11664-012-2399-5

Cited by 20 publications

(10 citation statements)

References 8 publications

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“…For example, the high-pressure phases of PbTe thermoelectrics may be stabilized in thin films deposited on KCl, KBr, and BaF 2 substrates. 207,208 Furthermore, it was recently demonstrated that even p-n junctions can be effective in generating thermoelectric currents, [209][210][211] and hence the design…”

Section: Journal Of Applied Physicsmentioning

confidence: 99%

Strategies and challenges of high-pressure methods applied to thermoelectric materials

Morozova

Korobeinikov

Ovsyannikov

2019

Journal of Applied Physics

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We describe the current state of experimental studies of the effects of applied high pressure or stress on the thermoelectric properties and performance parameters of thermoelectric materials, as well as the challenges faced in this area and possible directions for future work. We summarize and analyze literature data on the effects of high pressure on the Seebeck coefficient (thermoelectric power) of different materials that are related to common families of thermoelectrics, such as Bi

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Section: Journal Of Applied Physicsmentioning

confidence: 99%

Strategies and challenges of high-pressure methods applied to thermoelectric materials

Morozova

Korobeinikov

Ovsyannikov

2019

Journal of Applied Physics

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“…Thermoelectric generators are connected electrically in series and thermally in parallel, this means the contacts at the hot end and cold end is the main factor that determines the efficiency of the TE device 32 . The current design, where metal electrode bonding on hot side, causes mechanical stress and unavoidable temperature drops across the substrates causing drawbacks of thermoelectric generator (TEG) 33 . Additionally, the design causes mismatch of the coefficient of thermal expansion between the metal-semiconductor interface at high temperatures, mechanically induced failure, chemical instability and diffusion of atoms across the interfaces 34 .…”

mentioning

confidence: 99%

“…In this paper, the design is based on pn-junction TEG, where the p-type and n-type planner patterns are connected directly at the hot end forming a pn-junction, and electrical contacts on the cold side. The design will alleviate the issues mentioned above and generate electron-hole pairs in space charge region, thus, contributing to thermoelectric device efficiency 33 . Figure 1 shows the schematic of pn-junction TEG.…”

mentioning

confidence: 99%

A thin film efficient pn-junction thermoelectric device fabricated by self-align shadow mask

Kogo

Xiao

Danquah

et al. 2020

Sci Rep

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Large area highly crystalline MoS 2 and WS 2 thin films were successfully grown on different substrates using radio-frequency magnetron sputtering technique. Structural, morphological and thermoelectric transport properties of MoS 2, and WS 2 thin films have been investigated systematically to fabricate high-efficient thermal energy harvesting devices. X-ray diffraction data revealed that crystallites of MoS 2 and WS 2 films are highly oriented in 002 plane with uniform grain size distribution confirmed through atomic force microscopy study. Surface roughness increases with substrate temperature and it plays a big role in electron and phonon scattering. Interestingly, MoS 2 films also display low thermal conductivity at room temperature and strongly favors achievement of higher thermoelectric figure of merit value of up to 1.98. Raman spectroscopy data shows two distinct MoS 2 vibrational modes at 380 cm −1 for E 1 2g and 410 cm −1 for A 1g. Thermoelectric transport studies further demonstrated that MoS 2 films show p-type thermoelectric characteristics, while WS 2 is an n-type material. We demonstrated high efficient pn-junction thermoelectric generator device for waste heat recovery and cooling applications.

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“…We approach the new architecture by means of experiments and simulations. Our experimental realizations of the PNG were created in a bottom‐up approach from highly doped silicon . In a first step the raw material, highly porous nanopowder from the gas phase synthesis, is densified by CAPAD .…”

Section: Devicesmentioning

confidence: 99%

Silicon‐based nanocomposites for thermoelectric application

Schierning

Stoetzel

Chavez

et al. 2016

Physica Status Solidi (a)

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Here we present the realization of efficient and sustainable silicon‐based thermoelectric materials from nanoparticles. We employ a gas phase synthesis for the nanoparticles which is capable of producing doped silicon (Si) nanoparticles, doped alloy nanoparticles of silicon and germanium (Ge), SixGe1–x, and doped composites of Si nanoparticles with embedded metal silicide precipitation phases. Hence, the so‐called “nanoparticle in alloy” approach, theoretically proposed in the literature, forms a guideline for the material development. For bulk samples, a current‐activated pressure‐assisted densification process of the nanoparticles was optimized in order to obtain the desired microstructure. For thin films, a laser annealing process was developed. Thermoelectric transport properties were characterized on nanocrystalline bulk samples and laser‐sintered‐thin films. Devices were produced from nanocrystalline bulk silicon in the form of p–n junction thermoelectric generators, and their electrical output data were measured up to hot side temperatures of 750 °C. In order to get a deeper insight into thermoelectric properties and structure forming processes, a 3D‐Onsager network model was developed. This model was extended further to study the p–n junction thermoelectric generator and understand the fundamental working principle of this novel device architecture. Gas phase synthesis of composite nanoparticles; nanocrystalline bulk with optimized composite microstructure; laser‐annealed thin film.

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A Thermoelectric Generator Concept Using a p–n Junction: Experimental Proof of Principle

Cited by 20 publications

References 8 publications

Strategies and challenges of high-pressure methods applied to thermoelectric materials

Strategies and challenges of high-pressure methods applied to thermoelectric materials

A thin film efficient pn-junction thermoelectric device fabricated by self-align shadow mask

Silicon‐based nanocomposites for thermoelectric application

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