A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations

Abstract

In this paper, the DC electrical behavior of n-MOS transistors based on Si nanowires with 100 and 110 channel orientations is thoroughly compared by means of Multi-Subband Ensemble Monte Carlo simulations. We find that the drain current depends on the nanowire diameter and it is slightly, but consistently, larger for 100 than for 110 nanowires. The observed differences in mobility, velocity and spatial charge distribution are interpreted in terms of the effective masses and populations of the different Si conduction band valleys, whose six-fold degeneracy is lifted by quantum confinement in narrow nanowires. Finally, we study the scaling behavior for channel lengths down to 8 nm, concluding that the differences observed between both orientations are minimal.

Common Source Amplifier and Ring Oscillator Circuit Performance Optimization Using Multi-Bridge Channel FETs

“…The transconductance (g m ) 21 compares the change in I D to the equivalent change in V GS . Inherently, g m signifies a device speed, and a higher g m also implies better logic operations at a faster rate.…”

“…m Another important analog FOM is transconductance generation factor (TGF) = g m /I D , which determines the effective utilisation of the drive current to get an acceptable value of g m and the amount of power required to attain high performance. 21 The device with a high TGF value can operate at lower voltages without compromising the performance. Figure 6b shows the variability in TGF as a function of NS W for various NS H .…”