A Thorough Thermodynamic Evaluation of the Silicon-Hydrogen-Chlorine System

Abstract

A sensitive computational method allowed the determination of normalΔnormalHf°298false(SiHCl3,normalgfalse)=−116.9± 0.7 kcal/mol based on various previously reported experimental investigations. For the first time the gaseous compounds SiCl3 and Si2Cl6 were included in a thermodynamic evaluation of the Si‐H‐Cl system. Diagrams relating normalCl/Hfalse(0.01–10false)normalto Si/normalCl over the temperature range of 400°–1700°K indicate the equilibrium state of the system with respect to the corresponding increase or decrease of silicon in the gaseous phase.

Gas phase diffusion and surface reactions in the chemical vapour deposition of silicon

“…This behaviour is in accordance with thermodynamic expectations (Ref. 19,20,21). The situation at which G = 0, where e~ching and growth are in balance deserves special attention.…”

Thermodynamic analysis of silicon deposition on ASTM P92 and AISI 4340 steels

“…For instance, in relation with the process of interest here, Sirtl and Hunt describe the Si-H-Cl system by means of the standard enthalpy of formation, considering the initial partial pressure of precursors as starting point of the calculations and subsequently finding the equilibrium concentrations of the product species as a function of temperature [7,8].…”

Simulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel Reactors

“…The obtained PDE system was solved through the commercial finite elements code FIDAP [13]. The adopted chemico-physical parameter are summarized in Table 2, being all the values obtained from literature compiIations [4,14]. …”