A three-dimensional photoresist etching simulator for TCAD

Karafyllidis, Ioannis

doi:10.1088/0965-0393/7/2/002

Cited by 16 publications

(19 citation statements)

References 17 publications

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“…In addition to the proven level of accuracy, the CA technique is straightforward in implementation as it allows the user to employ regular and uniform spatial and temporal discretization in modeling the physical system. A modified three dimensional CA algorithm that follows closely, to the one proposed by Karafyllidis [Karafyllidis, 1999] is employed here. The exposed photoresist domain is divided into identical cubic CA cells, each with edge length a.…”

Section: Theoretical Modelmentioning

confidence: 99%

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Metal Particle-Surface System for Plasmonic Lithography

Murukeshan¹,

Sreekanth²,

Chua³

2010

Lithography

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Section: Theoretical Modelmentioning

confidence: 99%

“…The modified 3D CA model is evaluated using a homogeneous etch-rate distribution function [Karafyllidis, 1999] to determine the values of γ edg and γ vtx in Eq (5) and Eq (6) and their effectiveness to describe the effects from the edge and vertex cells. The cells are assigned the same development rate value.…”

Section: Homogenous Development Rate Testmentioning

confidence: 99%

Metal Particle-Surface System for Plasmonic Lithography

Murukeshan¹,

Sreekanth²,

Chua³

2010

Lithography

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“…With the development of the computer technology, CA exhibits some advantages such as high accuracy. CA has been successfully adopted to simulate the lithography process [8,12] , silicon anisotropic etching process [13] , tumor growth [14] , etc.…”

Section: Cellular Automatamentioning

confidence: 99%

“…The ray-tracing model is also fast, but it has a great weakness that there are probably regions in the photoresist not reached by the choice of initial rays. Compared with other models, the CA models are both stable and accurate [8] .…”

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confidence: 96%

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Numerical study on photoresist etching processes based on a cellular automata model

Zhou

Huang

et al. 2007

SCI CHINA SER E

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For the three-dimensional (3-D) numerical study of photoresist etching processes, the 2-D dynamic cellular automata (CA) model has been successfully extended to a 3-D dynamic CA model. Only the boundary cells will be processed in the 3-D dynamic CA model and the structure of "if-else" description in the simulation program is avoided to speed up the simulation. The 3-D dynamic CA model has found to be stable, fast and accurate for the numerical study of photoresist etching processes. The exposure simulation, post-exposure bake (PEB) simulation and etching simulation are integrated together to further investigate the performances of the CA model. Simulation results have been compared with the available experimental results and the simulations show good agreement with the available experiments. cellular automata, process simulation, optical lithography simulation, modelAs the micro-electro-mechanical systems (MEMS) design and fabrication become increasingly advanced, accurate three-dimensional (3-D) simulation systems for fabrication processes such as etching, lithography, deposition processes, etc. demonstrate to be useful to improve the efficiency of MEMS design and to reduce the development costs of MEMS products. At the same time, 3-D optical lithography simulation becomes significantly important for the accurate analysis of complex structures, such as contacts, corners, etc., and for the optimization of the masks for these structures, as the complexity of integrated circuits (IC) increases [1] . Furthermore, simulation is essential to determine the best way of pushing the present set of equipment involved in optical lithography to its maximum limits [2] .The photoresist etching simulation is usually the most time-consuming step among the basic optical lithography simulation steps [3] , so the key to increase the speed of optical lithography simulation is to speed up the simulation of the photoresist etching process. During the past two decades, some simulators for optical lithography processes have been successfully developed

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Modeling and Simulation of SU-8 Thick Photoresist Lithography

Zhou¹,

Huang²

2017

Toxinology

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A three-dimensional photoresist etching simulator for TCAD

Cited by 16 publications

References 17 publications

Metal Particle-Surface System for Plasmonic Lithography

Metal Particle-Surface System for Plasmonic Lithography

Numerical study on photoresist etching processes based on a cellular automata model

Modeling and Simulation of SU-8 Thick Photoresist Lithography

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