A Three-Dimensional Study of the Absorbed Energy Density in Electron-Resist Films on Substrates

Multiphysics simulations are performed to analyze the pattern formation process in electron beam lithography (EBL). The simulations consist of a Monte Carlo simulation of electron scattering and molecular dynamics simulation. Some issues encountered in EBL such as electron irradiation defects, resist heating effects and charging effects on pattern formation are studied using the simulations. The simulations revealed shrinkage of the electron-exposed resist surface, the change of pattern edge caused by rising temperature and the shift of electron beam landing position induced by a charging effect. Atomic-scale information on pattern structure and stress distribution in EBL are also discussed.

Section: Simulation Modelmentioning

confidence: 99%

“…Numerical simulations have become a powerful approach to evaluate and predict the pattern profiles in lithography techniques [1][2][3][4][5][6][7][8][9]. With the progress of pattern formation techniques, the feature size of the resist pattern has decreased.…”

Section: Introductionmentioning

confidence: 99%

Multiphysics Simulation of Nanopatterning in Electron Beam Lithography

Yasuda

Tada

Kotera

2016

“…In the present simulations, the PMMA film is divided into eight layers. The rate of chain scission in the resist is set to be proportional to the exposure intensity distribution of each layer preliminarily calculated by Monte Carlo simulation of the electron scattering [1,5].…”

Section: Simulation Modelmentioning

confidence: 99%

“…Numerical simulations are indispensable for evaluating and predicting the pattern profiles in lithography techniques [1][2][3][4][5][6][7][8][9]. With the progress of pattern formation techniques, the feature size of the resist pattern has decreased.…”

Section: Introductionmentioning

confidence: 99%

Molecular Dynamics Study of Line Edge Roughness and the Proximity Effect in Electron Beam Lithography

Hitomi

Michishita

Kawata

et al. 2015

Pattern formation in electron beam lithography (EBL) is investigated with molecular dynamics simulations. The electron exposure and development process are modeled by polymer chain scission and polymer segment removal from the resist, respectively. The line edge roughness of a sub-10-nm resist pattern is analyzed with the simulations. The proximity effect in EBL is also investigated. The effects of resist molecular size, secondary electron generation, and the substrate material are discussed.

“…Numerical simulations have been widely used to evaluate and predict the pattern profiles in EBL [1][2][3][4][5][6][7][8]. Monte Carlo simulation of electron scattering is a typical tool for the electron exposure process.…”

Section: Introductionmentioning

confidence: 99%

Multiscale Simulation of the Development Process in Electron Beam Lithography

Yasuda

Hitomi

Kawata

et al. 2017

Multiscale simulations are performed to study the development process in electron beam lithography. The whole pattern profiles are calculated with the cell removal simulation. The pattern profiles are shown to reflect the electron scattering manner in the resist. The local pattern structures are then studied by molecular dynamics simulation. The residual layer with a lot of voids, the residual polymer chains and concave sidewall reflecting the molecular structures are observed as typical atomic-scale pattern structures. The size of the pattern roughness is observed to be comparable with the molecular size of the resist. The diffusion process of the resist molecules among the developer molecules is also analyzed.