A three-terminal double junction GaAs/GaAlAs cascade solar cell

Flores, C.

doi:10.1109/edl.1983.25662

Cited by 17 publications

(9 citation statements)

References 4 publications

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“…A three-terminal (3T) version of the classical 2JSC is depicted in Figure 1b, also comprising two complete pn-junctions, typically with their corresponding passivating layers, and a contacting layer for the middle terminal. [7][8][9] In this work, we demonstrate a new, more compact device concept for the integration of two materials of different E G into one high-e ciency solar cell. This concept, illustrated in Figure 1c, consists of an npn (or pnp) structure and, due to the similarity to a transistor, is called heterojunction bipolar transistor solar cell (HBTSC).…”

Section: Main Textmentioning

confidence: 99%

GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell

Zehender

Svatek

Steiner

et al. 2020

Preprint

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We demonstrate a novel multijunction architecture, the heterojunction bipolar transistor solar cell (HBTSC), which exhibits the performance of a double-junction solar cell in a more compact npn (or pnp) semiconductor structure. The HBTSC concept has the advantages of being a three-terminal device, such as low spectral sensitivity and high tolerance to non-optimal band gap energies, while it reduces the fabrication and operation complexity with respect to other multi-terminal devices because, for example, it can produce independent power extraction from the two junctions without the need for extra layers for their isolation or inter-connection. The top and bottom junctions in our proof-of-concept HBTSC prototype, which is made of epitaxial GaInP/GaAs, exhibit independent current-voltage characteristics under AM1.5G illumination, with respective open-circuit voltages of 1.33 and 0.95 V. The voltage difference between the two junctions is notable considering that they share a thin (< 600 nm) GaInP layer which contributes to the photogeneration of both junctions. This can be explained by a gradient in the minority carrier quasi-Fermi level within the base layer, which is compatible with a high fill factor. We also offer a technological solution for contacting the intermediate layer and study the effect of series resistance on the device performance. The HBTSC opens a new perspective in the understanding of multi-junction devices and it is an excellent candidate for the application of low-cost fabrication techniques, and for the implementation of III-V on silicon tandems with parallel/series interconnection for high energy yield.

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Section: Main Textmentioning

confidence: 99%

GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell

Zehender

Svatek

Steiner

et al. 2020

Preprint

View full text Add to dashboard Cite

show abstract

“…A three-terminal (3T) version of the classical 2JSC is depicted in Figure 1b, also comprising two complete pn-junctions, typically with their corresponding passivating layers, and a contacting layer for the middle terminal. [7][8][9] In this work, we demonstrate a new, more compact device concept for the integration of two materials of different EG into one high-efficiency solar cell. This concept, illustrated in Figure 1c, consists of an npn (or pnp) structure and, due to the similarity to a transistor, is called heterojunction bipolar transistor solar cell (HBTSC).…”

Section: Toc Graphic Introductionmentioning

confidence: 99%

GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell

Zehender

Svatek

Steiner

et al. 2021

Preprint

View full text Add to dashboard Cite

We demonstrate a heterojunction bipolar transistor solar cell (HBTSC), a device that exhibits the performance of a double-junction solar cell in a more compact npn (or pnp) semiconductor structure. The HBTSC concept has the advantages of being a three-terminal device, such as low spectral sensitivity and high tolerance to non-optimal band-gap energies, while it has a lower fabrication and operation complexity than other multi-terminal architectures: it can produce independent power extraction from the two junctions without the need for extra isolating or interconnecting layers between them. The two junctions in our proof-of-concept HBTSC prototype, which is made of epitaxial GaInP/GaAs, exhibit independent current-voltage characteristics under AM1.5G illumination, with respective open-circuit voltages of 1.33 and 0.95 V. The HBTSC opens a new perspective in the understanding of multi-junction devices, and it is an excellent candidate for the application of low-cost fabrication techniques, and for the implementation of III-V-on-silicon tandems.

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“…The idea of multi-junction cells was suggested [7] and investigated [8] in the early days of photovoltaic technology. Significant progress was triggered by AlGaAs/GaAs tandem cells with tunnel junctions [9] and metal interconnections [10][11][12]. At that moment, it was predicted that the power-conversion efficiency of multi-junction solar cells would reach close to 30% [13], but this was not fulfilled due to difficulties in stable tunnel junctions [14] and defects in the AlGaAs [15].…”

Section: Introductionmentioning

confidence: 99%

The Outdoor Field Test and Energy Yield Model of the Four-Terminal on Si Tandem PV Module

et al. 2020

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The outdoor field test of the 4-terminal on Si tandem photovoltaic module (specifically, InGaP/GaAs on Si) was investigated and a performance model, considering spectrum change affected by fluctuation of atmospheric parameters, was developed and validated. The 4-terminal on Si tandem photovoltaic module had about 40% advantage in seasonal performance loss compared with standard InGaP/GaAs/InGaAs 2-terminal tandem photovoltaic module. This advantage increases (subarctic zone < temperate zone < subtropical zone). The developed and validated model used an all-climate spectrum model and considered fluctuation of atmospheric parameters. It can be applied every type of on-Si tandem solar cells.

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A three-terminal double junction GaAs/GaAlAs cascade solar cell

Cited by 17 publications

References 4 publications

GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell

GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell

GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell

The Outdoor Field Test and Energy Yield Model of the Four-Terminal on Si Tandem PV Module

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