C. Flores scite author profile

The paper discusses the problems of nucleation layer and substrate specification selection for a bottom Ge cell performance. GaAs/Ge, AlGaAs/Ge and InGaP/Ge heterojuctions have been compared showing how lattice matching and dopant interdiffusion control are key aspects for improving the Ge bottom cell photovoltaic response. The influence of substrates orientation, polarity and resistivity on the electrical performances of the bottom cells are presented.

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The GaAs deployable solar array for SAC-B

Caon¹,

Contini²,

D'Accolti³

et al.

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C. Flores

The effect of the growth rate on the low pressure metalorganic vapour phase epitaxy of GaAs/Ge heterostructures

A three-terminal double junction GaAs/GaAlAs cascade solar cell

Modified poly(3-alkylthiophene) for LED preparation

Bottom cell growth aspects for triple junction InGaP/(In)GaAs/Ge solar cells

The GaAs deployable solar array for SAC-B

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