A three-terminal non-volatile ferroelectric switch with an insulator–metal transition channel

Abstract

Ferroelectrics offer a promising material platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET operation entails a fundamental trade-off between the read and the program operations. To overcome this trade-off, we propose in this work, a novel device concept, Mott-FeFET, that aims to replace the Silicon channel of the FeFET with VO2- a material that exhibits an electrically driven insulator–metal phase transition. The Mott-FeFET design, which demonstrates a (ferroelectric) polarization-dependent threshold voltage, enables the read current distinguishability (i.e., the ratio of current sensed when the Mott-FeFET is in state 1 and 0, respectively) to be independent of the program voltage. This enables the device to be programmed at low voltages without affecting the ability to sense/read the state of the device. Our work provides a pathway to realize low-voltage and energy-efficient non-volatile memory solutions.

Nanoelectronics Using Metal–Insulator Transition

“…The Mott‐FeFET structure in which the silicon channel of the FeFET is replaced with VO 2 (inset of Figure 11e) provides a polarization‐dependent threshold voltage within the memory window, so it has read current distinguishability independent of the program voltage, showing the possibility of solving this trade‐off issue. [ 202 ] Considering the lateral filamentary model at the source–drain bridge (Figure 11f), the electrical state of VO 2 at the denoted sites is supported. Further advanced applications were simulated by fabricating FeFET arrays, employing the NOR memory architecture (Figure 11g).…”

“…[ 72,201 ] A recent study proposed a top‐gate and top‐contact (TGTC) structured ferroelectric‐FET (FeFET) using hafnium oxide (HfO 2 ) and VO 2 layer, as well as FET arrays based on the FeFETs. [ 202 ] As shown in the output curve in Figure 11e, the applied constant V gs can affect not only the MIT behavior in VO 2 directly, but also the tendency of domain switching in HfO 2 , which tunes V th values required to induce the MIT. In this approach, the fundamental trade‐off issue between the program voltage of the FeFET (write operation) and MW (memory window) can be improved by using materials with electrically driven insulator–metal phase transition characteristics.…”

“…i) Time revolution of applied voltage of WLW 2 along with the WLR 2 profile for the reading mode in the second row, and reading current of M 21 , M 22 , and M 23 when the M 22 cell is in "1" logic mode before read operation. Reproduced with permission [202]. Copyright 2022, Nature Publishing Group.…”

Review of the VO2 smart material applications with emphasis on its use for spacecraft thermal control

“…This reduced size permits better passive heat dissipation to obtain a stable temperature, with a slight increase due to joule effects, but still too far from that of the MIT. Vaidya et al (2022) proposed the VO 2 to replace the Silicon channel of the common Ferroelectrics Field Effect Transistor (FeFET) as energy-efficient nonvolatile memory. The FeFETbased implementation is one of the most area-efficient ferroelectric memory architectures.…”

High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications

“…The development of new processes to produce semiconductor nanostructures and their integration in many advanced fields such as nanocrystals in solar cells, quantum wells in lasers and nano-wires in FinFet transistors, has generated a huge expansion of this field of research which has find an increasing number of potential applications [1][2][3][4][5][6]. Among the most mature NCs studied at the nano-scale, the best controlled are undoubtedly the silicon (Si) ones (with 60 years of permanent research devoted to this semiconductor material since the beginning of microelectronics [7,8]).…”