2D materials based superlattices have emerged as a promising platform to modulate band structure and its symmetries. In particular, moiré periodicity in twisted graphene systems produces flat Chern bands. The recent observation of anomalous Hall effect (AHE) and orbital magnetism in twisted bilayer graphene has been associated with spontaneous symmetry breaking of such Chern bands. However, the valley Hall state as a precursor of AHE state, when time-reversal symmetry is still protected, has not been observed. Our work probes this precursor state using the valley Hall effect. We show that broken inversion symmetry in twisted double bilayer graphene (TDBG) facilitates the generation of bulk valley current by reporting experimental evidence of nonlocal transport in a nearly flat band system. Despite the spread of Berry curvature hotspots and reduced quasiparticle velocities of the carriers in these flat bands, we observe large nonlocal voltage several micrometers away from the charge current path — this persists when the Fermi energy lies inside a gap with large Berry curvature. The high sensitivity of the nonlocal voltage to gate tunable carrier density and gap modulating perpendicular electric field makes TDBG an attractive platform for valley-twistronics based on flat bands.

Coupled electronic oscillators have recently been explored as a compact, integrated circuit- and room temperature operation-compatible hardware platform to design Ising machines. However, such implementations presently require the injection of an externally generated second-harmonic signal to impose the phase bipartition among the oscillators. In this work, we experimentally demonstrate a new electronic autaptic oscillator (EAO) that uses engineered feedback to eliminate the need for the generation and injection of the external second harmonic signal to minimize the Ising Hamiltonian. Unlike conventional relaxation oscillators that typically decay with a single time constant, the feedback in the EAO is engineered to generate two decay time constants which effectively helps generate the second harmonic signal internally. Using this oscillator design, we show experimentally, that a system of capacitively coupled EAOs exhibits the desired bipartition in the oscillator phases without the need for any external second harmonic injection, and subsequently, demonstrate its application in solving the computationally hard Maximum Cut (MaxCut) problem. Our work not only establishes a new oscillator design aligned to the needs of the oscillator Ising machine but also advances the efforts to creating application specific analog computing platforms.

Ferroelectrics offer a promising material platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET operation entails a fundamental trade-off between the read and the program operations. To overcome this trade-off, we propose in this work, a novel device concept, Mott-FeFET, that aims to replace the Silicon channel of the FeFET with VO2- a material that exhibits an electrically driven insulator–metal phase transition. The Mott-FeFET design, which demonstrates a (ferroelectric) polarization-dependent threshold voltage, enables the read current distinguishability (i.e., the ratio of current sensed when the Mott-FeFET is in state 1 and 0, respectively) to be independent of the program voltage. This enables the device to be programmed at low voltages without affecting the ability to sense/read the state of the device. Our work provides a pathway to realize low-voltage and energy-efficient non-volatile memory solutions.

We present a quick and reliable method to cut 2D materials for creating 2D twisted heterostructures and devices. We demonstrate the effectiveness of using a tapered fibre scalpel for cutting graphene. Electrical transport measurements show evidence of the desired twist between the graphene layers fabricated using our technique. Statistics of the number of successfully twisted stacks made using our method is compared with h-BN assisted tearand-stack method. Also, our method can be used for twisted stack fabrication of materials that are few nanometers thick. Finally, we demonstrate the versatility of the tapered fibre scalpel for other shaping related applications for sensitive 2D materials.Two dimensional (2D) materials harbour a host of exciting phenomena [1]. The newly discovered unconventional properties of these materials are of interest to multiple disciplines. There is an interest in the physics of excitons * deshmukh@tifr.res.in

Rapid prototyping of devices using exfoliated Molybednum di-Sulphide (MoS2) and Molybdenum di-Selenide (MoSe2) requires an experimental protocol for maximizing the probability of realizing flakes with desired physical dimension and properties. In this work, we analyzed the size and thickness distribution of MoS2 and MoSe2 single crystalline flakes exfoliated using anodic bonding technique and established a correlation between physical dimension of the flakes and the bonding parameters. Anodic bonding was carried out by applying a fixed voltage of 200 V with a set temperature of 150 °C for four different bonding time intervals. On analyzing the flake parameters from the four anodic bonded substrates using the optical and atomic force microscopy, it is found that the probability of getting flakes with large lateral size (>200 μm) increases as the bonding time interval is increased. Most of these large sized flakes have thickness of more than one hundred mono-layers and a tiny fraction of them have thickness of the order of few monolayers. A similar trend was also observed for MoSe2 single crystals. To demonstrate the feasibility of this technique in rapid prototyping, ultra thin MoS2 flakes was directly bridged between two ITO electrodes and their transport properties was investigated. Micro-Raman and photoluminescence studies were taken on selected regions of the thicker and thinner exfoliated flakes and their physical properties are compared.