A thyristor-based photoreceiver based on the dual-channel double-heterostructure optoelectronic switch

The switching mechanism in the dual channel double heterostructure optoelectronic switch is investigated using a mathematically precise definition to describe the conditions at the transition between the off state and negative resistance regions on the thyristor I–V curve. Analytical expressions of quantum well density, voltage, and current parameters at switching are found for both three terminal electrical injection and optical input. Agreement is found to be within 2% of full numerical simulation. Using derivatives of the analytic functions to determine the various current gains, the classic thyristor switching equations due to avalanching are found to be inaccurate and that instead switching is more appropriately determined by the rate of change of charge populations in the control regions compared to the other charges in the device. This analysis is supported by measurements of three terminal thyristor operation of the thyristor device.

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Resonant Cavity Enhanced Thyristor-Based Photodetectors for Optical Receivers

Pile

Taylor

2016

IEEE J. Quantum Electron.

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A thyristor-based photoreceiver based on the dual-channel double-heterostructure optoelectronic switch

Cited by 4 publications

References 23 publications

Long wavelength infrared (LWIR) photodetection in a modulation doped thyristor

Long wavelength infrared (LWIR) photodetection in a modulation doped thyristor

Derivation of the switch-on parameters in the dual channel double heterostructure optoelectronic switch

Resonant Cavity Enhanced Thyristor-Based Photodetectors for Optical Receivers

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