A THz InGaAs/InP double heterojunction bipolar transistor withfmax= 325 GHz and BVCBO= 10.6 V

Cheng, Wei; Wang, Yuan; Yan, Zhao; Lu, Haijun; Gao, Hanchao; Yang, Ning

doi:10.1088/1674-4926/34/5/054006

Cited by 6 publications

(1 citation statement)

References 4 publications

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“…Three mesas are formed through selective wet-etching, the base contact metal is defined by using the self-aligned technique. Ti/Pt/Au is used as the emitter-collector contact, while Pt/Ti/Pt/Au is used as the base contact [15,16]. All metals are formed through deposition and lift-off processes.…”

Section: Methodsmentioning

confidence: 99%

High performance wafer scale flexible InP double heterogeneous bipolar transistors

Wu¹,

Dai²,

Wang³

et al. 2021

Semicond. Sci. Technol.

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This letter reports on the first demonstration of wafer scale flexible InP double heterogeneous bipolar transistors (DHBTs) with record cut-off frequency (f T) and maximum oscillation frequency (f MAX). The as-fabricated DHBTs on 3-inch InP bulk substrate are separated by epitaxial layer lift-off, followed by adhesive bonding onto flexible substrate. Radio frequency measurements reveal that the InP DHBTs on flexible substrate exhibit a f T of 337 GHz and f MAX of 485 GHz, representing the highest f T and f MAX ever reported in flexible electronics. Moreover, InP DHBTs on flexible substrate have good consistency and the functional transistor yield is more than 73%. The results provide ways to accelerate the time for flexible electronics toward future applications working at multi-gigahertz range.

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Section: Methodsmentioning

confidence: 99%

High performance wafer scale flexible InP double heterogeneous bipolar transistors

Wu¹,

Dai²,

Wang³

et al. 2021

Semicond. Sci. Technol.

Self Cite

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Cap-layer and charge sheet effect in InP based pnp δ-doped heterojunction bipolar transistor

2020

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A millimeter wave linear superposition oscillator in 0.18 μm CMOS technology

Yan¹,

Mao²,

Su³

et al. 2014

J. Semicond.

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This paper presents a millimeter wave (mm-wave) oscillator that generates signal at 36.56 GHz. The mm-wave oscillator is realized in a UMC 0.18 m CMOS process. The linear superposition (LS) technique breaks through the limit of cut-off frequency (f T /, and realizes a much higher oscillation than f T . Measurement results show that the LS oscillator produces a calibrated -37.17 dBm output power when biased at 1.8 V; the output power of fundamental signal is -10.85 dBm after calibration. The measured phase noise at 1 MHz frequency offset is -112.54 dBc/Hz at the frequency of 9.14 GHz. This circuit can be properly applied to mm-wave communication systems with advantages of low cost and high integration density.

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A THz InGaAs/InP double heterojunction bipolar transistor withf_max= 325 GHz and BV_CBO= 10.6 V

Cited by 6 publications

References 4 publications

High performance wafer scale flexible InP double heterogeneous bipolar transistors

High performance wafer scale flexible InP double heterogeneous bipolar transistors

Cap-layer and charge sheet effect in InP based pnp δ-doped heterojunction bipolar transistor

A millimeter wave linear superposition oscillator in 0.18 μm CMOS technology

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