A Ti salicide process for 0.10 μm gate length CMOS technology

Kittl, J. A.; Hong, Qi-Zhong; Prinslow, Douglas A.; Misium, George R.

doi:10.1109/vlsit.1996.507775

Cited by 23 publications

(12 citation statements)

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“…1-7 A major problem for scaling Ti salicide to deepsubmicron features is the dependence of the C49 to C54 transformation on lateral feature size. 1-3 This was attributed 3,7 to the scarcity or lack of C49 grain boundaries, in particular triple-grain boundaries, which act as nucleation sites for C54 TiSi 2 , in structures where the lateral dimensions are smaller than the C49 grain size. This limits the application of Ti salicide to ϳ0.25 m ͑ϳC49 grain size͒ for processes in which Ti is reacted by RTP with crystalline Si.…”

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confidence: 99%

“…Preamorphization implants ͑PAI͒ extended this limit to ϳ0.1 m due to the smaller ͑ϳ0.07 m͒ C49 grain size achievable in the RTP reaction of Ti with amorphous Si. 7 In addition, the high temperatures required to transform C49 TiSi 2 to C54 TiSi 2 on deep-submicron structures, can result in agglomera-tion and degradation of device contact resistance and drive current. 1,2, [9][10][11] An alternative approach, the addition of Mo impurities close to the Ti/Si interface, was shown to result in easier formation of C54 TiSi 2 on submicron structures.…”

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confidence: 99%

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Mechanism of low temperature C54 TiSi2 formation bypassing C49 TiSi2: Effect of Si microstructure and Mo impurities on the Ti–Si reaction path

Kittl

Gribelyuk

Samavedam

1998

Applied Physics Letters

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X-ray diffraction, high resolution transmission electron microscopy, and resistivity measurements were used to demonstrate a modification of the Ti/Si reaction path consisting of direct nucleation followed by diffusion limited growth of low resistivity C54 TiSi2 without nucleation of high resistivity C49 TiSi2, for the reaction of Ti with Mo doped polycrystalline or Mo doped amorphous Si by rapid thermal processing at 650 °C. We also report the mechanism of early C54 nucleation. We demonstrate that MoSi2 and an unidentified silicide phase lattice matched to C54 TiSi2, with spacings of 4.15 and 2.26 Å, nucleate along the Ti/Si interface at early stages of the reaction and act as templates on which C54 TiSi2 nucleates and grows epitaxially. In contrast, the conventional phase sequence, nucleation and growth of C49 TiSi2 preceding nucleation of C54 TiSi2, was observed for the Ti/Mo doped single crystal (100) Si reaction and for all samples without Mo.

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confidence: 99%

Mechanism of low temperature C54 TiSi2 formation bypassing C49 TiSi2: Effect of Si microstructure and Mo impurities on the Ti–Si reaction path

Kittl

Gribelyuk

Samavedam

1998

Applied Physics Letters

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“…Salicide is a critical process that impacts key IC performance outputs such as gate delay and transistor drive current, and it contains some flavor of both front-end and back-end CMOS processing [1]. Technologically, salicide is challenging because research is being conducted simultaneously on materials such as titanium [2], [3], cobalt [4], [5], and nickel [6], and on technology modifications such as preamorphizing implants [7], refractory metal implants [8], capping layers [9], and high-temperature sputtering [10].…”

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confidence: 99%

A model-based approach for process design and its application to the titanium salicide process

Apte

Saxena

Rao

et al. 1998

IEEE Trans. Semicond. Manufact.

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Process technology development constitutes a significant cost in manufacturing integrated circuits. In this paper, we present a model-based approach for developing new process technology rapidly and inexpensively, using the salicide process to demonstrate the concepts. This approach is applied to evaluate performance tradeoffs, to develop insight into the underlying process physics, to quantify the impact of the salicide process on the device and circuit performance, and to estimate the process variability. The key idea of this approach is to group a sequence of process steps into a process module, and build simple and accurate process models for the module. The paper also illustrates the use of this model-based approach in synthesizing optimal processes rapidly based on requirements, contributing to the reduction of technology development cost and cycle time.

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“…3 In order to overcome the narrow line effect, a new salicide process including preamorphization implantation ͑PAI͒ treatment has been performed to achieve low sheet resistance and successful implementation into a submicron technology. 4,5 By the PAI treatment, C49 grains are confirmed to become much smaller in size. 5 Ma et al reported that nucleation of the C54 phase predominantly took place at triple junctions of the C49 grains.…”

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confidence: 97%

“…4,5 By the PAI treatment, C49 grains are confirmed to become much smaller in size. 5 Ma et al reported that nucleation of the C54 phase predominantly took place at triple junctions of the C49 grains. 6,7 With shrinking grain size by the PAI treatment, many such triple junction sites are certainly contained in the C49 grain boundaries and it is expected to lead to easy phase transformation.…”

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confidence: 97%

Microstructural study on the C49-to-C54 phase transformation in TiSi2 formed from preamorphization implantation

Okihara

Hirashita

Tai

et al. 1999

Journal of Applied Physics

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Microstructural characteristics of C49–TiSi2 in narrow lines have been investigated by transmission electron microscopy. The C49–TiSi2 formed by a preamorphization treatment exhibits small grain size and heavily faulted structures. C54 grains are also observed sporadically in the C49 matrix in spite of relatively low temperature range. Moreover, defects circularly distribute around a less-defective region in the vicinity of the C54 grains. The C49 grains in these regions are well aligned with identical crystallographic orientations. These results indicate two-dimensional growth of C49–TiSi2, and the circular defects are introduced by internal stress associated with the growth process. Also the internal stress is considered to enhance the heterogeneous C54 nucleation.

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A Ti salicide process for 0.10 μm gate length CMOS technology

Cited by 23 publications

References 1 publication

Mechanism of low temperature C54 TiSi2 formation bypassing C49 TiSi2: Effect of Si microstructure and Mo impurities on the Ti–Si reaction path

Mechanism of low temperature C54 TiSi2 formation bypassing C49 TiSi2: Effect of Si microstructure and Mo impurities on the Ti–Si reaction path

A model-based approach for process design and its application to the titanium salicide process

Microstructural study on the C49-to-C54 phase transformation in TiSi2 formed from preamorphization implantation

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