2022
DOI: 10.1016/j.prime.2022.100062
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A time to failure evaluation of AlGaN/GaN HEMT transistors for RF applications

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Cited by 2 publications
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“…For the RWPT system, we need a resonant power supply signal in MHz, which requires a structure of HF switching. The second part of this article shows the topology of the HF resonant inverter, Class-E, which has been developed thanks to of GaN transistors [32][33][34][35] characterized by fast switching and low conduction resistance (R cin ). This technology allows generation of HF-VHF-UHF signals, with less switching losses and high efficiency (between 89% and >97%) for a fixed distance, compared to other topologies.…”
Section: Introductionmentioning
confidence: 99%
“…For the RWPT system, we need a resonant power supply signal in MHz, which requires a structure of HF switching. The second part of this article shows the topology of the HF resonant inverter, Class-E, which has been developed thanks to of GaN transistors [32][33][34][35] characterized by fast switching and low conduction resistance (R cin ). This technology allows generation of HF-VHF-UHF signals, with less switching losses and high efficiency (between 89% and >97%) for a fixed distance, compared to other topologies.…”
Section: Introductionmentioning
confidence: 99%