A Triode-Compensated CMOS Bandgap Core for Sub-250 mV Supply Voltages

Gagliardi, Francesco; Ria, Andrea; Manfredini, Giuseppe; Piotto, M.; Bruschi, P.

doi:10.1109/prime55000.2022.9816756

Cited by 3 publications

(1 citation statement)

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“…V eb and ∆V eb are replaced by V GS and ∆V GS , respectively. Current-mode BGRs and current references (CRs) consisting only of MOSFETs were proposed [10][11][12]. A current reference based on a minimum current search principle implemented current compensation, which is similar to piecewise compensation, to improve the temperature coefficient [13].…”

Section: Introductionmentioning

confidence: 99%

A 2.25 ppm/°C High-Order Temperature-Segmented Compensation Bandgap Reference

Jia,

Ye,

Xiao

2024

Electronics

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This paper presents a bandgap reference (BGR) with high-order temperature-segmented compensation. The compensation signal is generated using the voltage difference between two bipolar junction transistor (BJT) emitter bases, each of which individually loads a proportional-to-absolute temperature (PTAT) current and a zero-to-absolute temperature (ZTAT) current. The proposed BGR achieves a low-temperature coefficient (TC) over a wide temperature range. Simulations using the 0.18 μm Bipolar-CMOS-DMOS process show a typical TC of 2.25 ppm/°C from −40 °C to 125 °C. With an active area of 0.07986 mm2, it consumes 36 μW power under an operating voltage of 1 V. The integrated output noise from 0.1 Hz to 10 Hz is 81.1 μV.

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