2016 IEEE International Symposium on Circuits and Systems (ISCAS) 2016
DOI: 10.1109/iscas.2016.7527159
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A true Random Number Generator using RTN noise and a sigma delta converter

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Cited by 16 publications
(8 citation statements)
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“…The design of Figliolia et al 53 does have potentially greater generation rate, but is significantly more complex and requires a lot more design area when implemented onto an IC. Also, Figliolia's design was not tested using the DIEHARD or NIST test suite, so the randomness of the generated bitstream is not verified.…”
Section: Discussionmentioning
confidence: 99%
“…The design of Figliolia et al 53 does have potentially greater generation rate, but is significantly more complex and requires a lot more design area when implemented onto an IC. Also, Figliolia's design was not tested using the DIEHARD or NIST test suite, so the randomness of the generated bitstream is not verified.…”
Section: Discussionmentioning
confidence: 99%
“…Recently, the presence of RTN signals in RRAM devices has drawn attention, as their inherent randomness can be exploited as a possible source of entropy for RNG circuits [24][25]. Nevertheless, a proper design of such circuits can be attained only by introducing suitable compact models, as the one proposed in this work.…”
Section: Design Of An Rtn-based Rng Circuitmentioning
confidence: 99%
“…In addition, RNGs and PUFs performances can be adversely affected by RTN, worsening their figures of merit (e.g., randomness). Nevertheless, it has been suggested [24][25] to exploit the intrinsic randomness of RTN as an entropy source to realize RTN-based PUFs and RNGs, which could open new interesting perspectives. Finally, RRAM-based temperature sensors that exploit RTN have been proposed [26].…”
Section: Introduction He Relentless Scaling Of Complementary Metal Oxidementioning
confidence: 99%
“…Random telegraph noise (RTN) has recently attracted a growing attention as probabilistic and relatively strong source of noise [15]. RTN has been studied in various types of devices including FETs [16][17][18][19], carbon nanotube transistors (CNTs) [20] and broad class of resistive switching memories [21][22][23][24][25][26].…”
Section: Introductionmentioning
confidence: 99%