A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs

Improvement of RF Performance by Using Tunnel Diode Body Contact Structure in PD SOI nMOSFETs

“…TB devices have significant G d degradation compared with others due to body resistance. For the excellent ability to suppress FBE [12], TDBC devices shows less G d degradation with respect to FB and TB devices. When the frequency beyond 20 GHz, G d of all the devices has a significant degradation possibly caused by substrate-coupling effect.…”

“…In order to form a TDBC structure, an Esaki diode [11] is embedded in the source region and adjacent to the buried oxide interface requiring an extra mask of P + -type diffusion region. The layout pattern and process steps reported in [12] are compatible with the usual SOI CMOS technology.…”

“…To assess the practical performance of these devices, the measured S-parameters are de-embedded using open and short de-embedding structures. The DC characteristics of single gate TDBC PD SOI nMOSFETs have already reported in [12], [13].…”

Characterization of DC, analog/RF, and low frequency noise in silicon-on-insulator nMOSFETs with different body-contact structures

“…Therefore, the LBBC body contact structure could be a good candidate for analog/RF integrated circuit applications due to its excellent capability suppressing floating-body effects and weak side effects to analog/RF performance. Very recently, J. Chen et al, [11] proposed a tunneling diode body contact structure and effectively suppressed the floating-body effects in partially depleted SOI MOSFETs. This structure is similar to LBBC, but it discharges holes through tunneling diode between the p + embedded layer and the n + source, without consuming additional chip area for body contact electrode.…”

Total Dose Effects in Tunnel-Diode Body-Contact SOI <formula formulatype="inline"><tex Notation="TeX">$n$</tex></formula>MOSFETs

“…There are two mechanisms that can reduce the radiation hardness of SOI circuits: 1) floating body effects (FBEs) can degrade the SEU hardness of partially depleted SOI circuits, and 2) the buildup of positive charge in the buried oxide during exposure Manuscript to total dose-ionizing-dose irradiation can cause significant back channel leakage [1]. We have developed and evaluated a Tunnel-Diode Body-Contact (TDBC) SOI structure that is designed to reduce or even eliminate back-channel leakage that may otherwise occur due to radiation-induced charge trapping in the buried oxide (BOX), and to simultaneously suppress FBEs [3]. This structure can be built with one fewer mask step than a BUSFET transistor, and suppresses FBE without the need for a source-body tie [2], [3].…”