A two-dimensional device simulator of semiconductor lasers

Ohtoshi, T.; Yamaguchi, Ken; Nagaoka, C.; Uda, Tsuyoshi; Murayama, Yoshimasa; Chinone, N.

doi:10.1016/0038-1101(87)90222-x

Cited by 81 publications

(19 citation statements)

References 27 publications

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“…These equations are discretized by the finite-difference method and solved self-consistently using the Gummel scheme [17]. The electron and hole densities are given by the following expressions:…”

Section: Device Modelingmentioning

confidence: 99%

Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMTs

Mizuta

Yamaguchi

Yamane

et al. 1989

IEEE Trans. Electron Devices

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Abstract-Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's are analyzed using two-dimensional numerical simulation based on a drift-diffusion model. A DX center model is introduced assuming Fermi-Dirac statistics for ionized donor density with the aluminum mole fraction dependence of the deep-donor energy level. The calculated results reveal that the decrease in transconductance of AlGaAs/GaAs HEMT's in a high gate-bias region is caused by the existence of DX centers. This is because the Fermi level is pinned at deep donor levels in the n-AIGaAs layer. Furthermore, the superiority of AlGaAs/InGaAs pseudomorphic HEMT's is discussed in terms of the Fermi-level pinning.

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Section: Device Modelingmentioning

confidence: 99%

Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMTs

Mizuta

Yamaguchi

Yamane

et al. 1989

IEEE Trans. Electron Devices

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“…For strong degeneracy, ( 5 ) becomes proportional to x 2 instead of x3I2. I n this case, however, the Fermi potential lies some hundred me\-above the band edge, which is only of academic interest and not correctly described even by (4), which bases on parabolic bands.…”

Section: N -P -C = O mentioning

confidence: 90%

“…Our calculation of the electron leakage bases on the stationary semiconductor device equations, which were originally proposed by van Roosbroeck [l] and have been successfully used for modeling the current flow in a variety of semiconductor devices (see, e.g. [2, 3]), among them injection lasers (see, e.g., [4]). In Section 2, we present 1) PSF 1297, DDR-1086 Berlin, GDR.…”

Section: Introductionmentioning

confidence: 99%

Influence of Surface Recombination on the Rate of Electron Leakage in Ridge-Waveguide Injection Lasers

Wünsche

Wenzel

1989

Phys. Stat. Sol. (a)

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Simple formulae for the rate of electron leakage in injection lasers are derived, which take into account the surface recombination and an arbitrary number of heterojunctions. Applied to RW‐lasers, where the surface beside the ridge is close to the active layer, a considerable enhancement of the leakage rate by the surface recombination is obtained. The influences of internal recombination, of drift fields, and of some device parameters on this effect are quantitatively investigated.

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“…VJnRRspRstRauO , (2) VJp+R+Rsp+Rst+RauO. (3) Here V is the electrical potential, and n and p the electron and hole densities, respectively.…”

Section: Modelmentioning

confidence: 99%

<title>Two-dimensional simulation of quantum well lasers</title>

McAlister

1994

Physics and Simulation of Optoelectronic Devices II

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We describe a two-dimensional model for quantum-well lasers that solves self-consistently the electrical and optical equations. The model includes a wavelength-and position-dependent gain function which is derived from a quantum-mechanical calculation. We have also incorporated the effects of strain into the model, through an anisotropic parabolic band approximation of the band structure from a Luttinger-Kohn k.p theory. With this model we are able to predict the lasing characteristics such as the light-current behavior, current and optical field distributions, as well as the optical gain, spontaneous emission rate and dependence of the characteristics on geometry and layer design. Examples of the utility of our approach are shown which, for instance, clearly show the benefit of strain to laser design.

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A two-dimensional device simulator of semiconductor lasers

Cited by 81 publications

References 27 publications

Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMTs

Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMTs

Influence of Surface Recombination on the Rate of Electron Leakage in Ridge-Waveguide Injection Lasers

<title>Two-dimensional simulation of quantum well lasers</title>

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