Influence of Surface Recombination on the Rate of Electron Leakage in Ridge-Waveguide Injection Lasers

Abstract

Simple formulae for the rate of electron leakage in injection lasers are derived, which take into account the surface recombination and an arbitrary number of heterojunctions. Applied to RW‐lasers, where the surface beside the ridge is close to the active layer, a considerable enhancement of the leakage rate by the surface recombination is obtained. The influences of internal recombination, of drift fields, and of some device parameters on this effect are quantitatively investigated.

Comparative theoretical and experimental studies of two designs of high-power diode lasers

“…Due to lack of knowledge we assumed constant SRH lifetimes throughout the structure. Other issues are surface recombination which is known to enhance leakage currents [22] and uncertainties about the band-offsets [23], in particular at the hetero-boundaries between direct-gap and indirect-gap AlGaAs.…”

A Model for the Calculation of the Threshold Current of SCH-MQW-SAS Lasers

“…In deriving the previous equations one of our main assumptions was charge neutrality [30] in the wells, n -p = C , (23) where n, p , and C denote the densities of electrons, holes, and charged impurities, respectively. If we introduce the equilibrium concentrations no and po easily obtained by solving (23) in the case F , = F,, the ansatz n = n , + N and p = p o + N , (24) where N is the excess carrier density, fulfils (23).…”