A two-dimensional diffusion model for liquid phase electroepitaxial growth of GaAs

Time dependent simulations of the growth of III–V crystals by the liquid phase electroepitaxy

“…The difference between our and their results is related to the different geometry of the crucible, being relatively elongated along the axis in the present study, and the relatively short studied in Ref. [14]. Therefore, in their study the convection roll occupies only the part of the liquid close to the wall.…”

“…This effect brings significant redistribution of the concentration in the liquid at later stages. It has to be noted that the general convection pattern is similar to that obtained by Dost and Quin [14]. The difference between our and their results is related to the different geometry of the crucible, being relatively elongated along the axis in the present study, and the relatively short studied in Ref.…”

Numerical simulation of liquid phase electro-epitaxial selective area growth

“…Note also that the conductivity in the solid is 100 times larger than the value of 40 O À1 cm À1 given by Ref. [8]; we use this value also to avoid large ratio of conductivities in order to reduce the computational time needed to iteratively solve the two-phase analog of Eqs. Despite that all results presented in this paper are obtained using artificially large values of D S and s S ; we show in Fig.…”

“…For instance, values for diffusion prefactors and activation energies cited on p. 202 of [20] for In Table 1 Physical parameters for a GaAs-like material; we are not attempting to exactly model GaAs. We choose T M ¼ 1073 K which is (i) close to the melting point of As (the latter is 1090 K) and (ii) coincides with the typical growth temperature (liquidus or saturation temperature) [8] Parameter…”

“…Such crystal growth technique is called liquid phase electroepitaxy (LPEE) when growth is on regular, non-patterned substrates. LPEE was studied intensively during the last two decades, see for example [4][5][6][7][8]. Among physical processes which may contribute to LPEE crystal growth are diffusion, electromigration, convection, heat transfer, and thermoelectric effects, e.g.…”