Abstract:In this paper the influences of the metal-gate and high-k/SiO2/Si stacked structure on the metal—oxide—semiconductor field-effect transistor (MOSFET) are investigated. The flat-band voltage is revised by considering the influences of stacked structure and metal—semiconductor work function fluctuation. The two-dimensional Poisson's equation of potential distribution is presented. A threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs is developed by solving these Poisson's equations … Show more
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