A two-phase CCD register with charge injected floating gate electrodes

Abstract

Reported here is a two-phase CCD register that features charge injected floating gate electrodes. Each transfer electrode (including both barrier and storage electrodes) contains both a floating gate and a control gate. A potential barrier under each barrier electrode is formed by injecting electrons into the floating gate, resulting in barrier regions which are self-aligned with the barrier electrodes. A 50-stage CCD register has been successfully fabricated and operated at a 5 MHz clock frequency.

On-Wafer Electron Beam Detectors by Floating-Gate FinFET Technologies

“…However, there are some restrictions on using the existing solution in advanced lithography systems. To achieve high charge transfer efficiency, CCDs require specialized fabrication processes [12]- [14]. For APS arrays can be made with processes which is compatible to CMOS process, the photodiodes are not optimized for electron beam collection [15], [16].…”