A Two-Step Process for the Formation of Au-Ge Ohmic Contacts to n-GaAs

Abstract

The formation of low temperature Au-Ge contacts to n-GaAs is a two-step process. In the first step, the metals segregate into Au and Ge rich regions and the intermixing of the Au and Ge with the Ga and As causes a reduction in the barrier height. The second step occurs after extended annealing, during which time Au and Ge continue to diffuse into the substrate. An orthorhombic Au-Ga phase is formed and it is likely that other Au-Ga or Ge-As phases are formed. The length of the extended anneal is dependent upon the atomic percent of Ge in the film, with the 10 at. % Ge taking 6 hr., the 27 at. % Ge taking 3 hr. and the 50 at. % Ge taking 9 hr. to become ohmic. The 75 at. % Ge sample doesn’t show ohmic behavior even after 33 hr. of annealing. The metal-semiconductor interface configuration appears abrupt, showing no protrusions into the GaAs substrate.

Probing the electronic transport on the reconstructed Au/Ge(001) surface

“…The occurrence of such a Au-enriched layer is not unexpected since Au is known to segregate into Ge bulk [ 22 ] especially at elevated temperatures. Therefore, we conclude that the subsurface layer emerges upon preparation of the Au/Ge(001) sample.…”