2014
DOI: 10.1088/2040-8978/16/5/055502
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A unified approach for radiative losses and backscattering in optical waveguides

Abstract: Sidewall roughness in optical waveguides represents a severe impairment for the proper functionality of photonic integrated circuits. The interaction between the propagating mode and the roughness is responsible for both radiative losses and distributed backscattering. In this paper, a unified vision on these extrinsic loss phenomena is discussed, highlighting the fundamental role played by the sensitivity of the effective index neff of the optical mode to waveguide width variations. The nw model presented app… Show more

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Cited by 45 publications
(32 citation statements)
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“…This is only true if the effect of backscattering can be neglected. For weakly guiding waveguides, such as those used in modern InP platforms, this is generally true as the backscattering is approximately −50 dB mm −1 [31]. The intensity of the slowly varying envelope, I x (t), and the phase, φ x (t), are defined such that E x (t) = I x (t) exp iφ x (t) where x represents the cw or ccw mode.…”
Section: External Optical Feedback and Noisementioning
confidence: 99%
“…This is only true if the effect of backscattering can be neglected. For weakly guiding waveguides, such as those used in modern InP platforms, this is generally true as the backscattering is approximately −50 dB mm −1 [31]. The intensity of the slowly varying envelope, I x (t), and the phase, φ x (t), are defined such that E x (t) = I x (t) exp iφ x (t) where x represents the cw or ccw mode.…”
Section: External Optical Feedback and Noisementioning
confidence: 99%
“…This means that more than a 90% of the power of pump and signal modes will be located in the active region, where the overlapping between the two modes has been calculated to be 0.97. Moreover, the electric field amplitude at the ridge-air interface is very low, which should minimize potential losses coming from the roughness of the walls [26]. These results suggest that the proposed structure is a promising route for fabricating active integrated devices doped with Er 3+ /Yb 3+ ions for amplification/ oscillation applications.…”
Section: Numerical Analysismentioning
confidence: 91%
“…where A is the proportionality factor determined by the sidewall roughness rms (σ) and the roughness correlation length ( c L ), neff is the effective index of the waveguide optical mode, and w is the width of the waveguide. A full expression of A can be found in [31]. Given a waveguide geometry that is far from mode cut-off condition, the magnitude of the factor A in general does not depend on the waveguide width.…”
Section: Waveguide Loss Considerationmentioning
confidence: 99%