applied and realized in new emerging memristors (i.e., resistive switching (RS)) devices, such as spider silk, silk fibroin, and egg albumen, and have been adopted as a functional layer to prepare the memristor cell. [1,2] Biomemristors have the advantages of low costs and being environmentally friendly, and they can be used to mimic the biosynapse function or nonvolatile memory to meet the need for sustainable development of electronic devices. Because of the unique advantages and potential applicability of biomemristors, biomemristors have a wide range of applications in electronic skin, biomedical and brain chip applications. [3,4] In general, biomemristor cells must be biocompatible and for electronic applications. [5-7] However, most memristor cells are made of inorganic materials, which are brittle and incompatible without flexible and versatile functionalities. [8-10] Among these biomaterials, bovine serum doped with nanogold (BSA:Au) is a natural organic material that is environmentally friendly. However, the performance of biomemristors based on this material is not stable; switching voltage and high-and low-resistance values are still relatively scattered to some extent. Therefore, it is necessary to develop flexible biomemristors that can degrade and have stable performance and reliable repeatability. On the other hand, flexible electronic device cells have been widely explored in recent years [11] in wearable devices, foldable displays, and nonvolatile resistive random-access memory devices. Furthermore, if the functional layer possesses good water-solubility, traditional electronic devices may not pollute the environment, which is undoubtedly great progress. In this work, we prepared a biomemristor using BSA:Au as the intermediate layer. We designed a new hybrid structure and added a layer of HfO 2 between the intermediate layer and electrode to stabilize the device's relevant properties. By analyzing the switching threshold distribution of devices with and without an HfO 2 intermediate layer, we discovered that the threshold voltage and the switching speed of devices with an intermediate oxide layer become smaller and faster. It is proposed that the filament rupture/rejuvenation depends on the two-layer interface region due to different Ag + traveling speeds in these two layers. We also constructed the same structure on a polydimethylsiloxane (PDMS) flexible substrate to give the device good foldability and make it wearable. These devices also possess excellent performance in bending and folding conditions.