A unified compact model for emerging DG FinFETs and GAA nanowire MOSFETs including long/short-channel and thin/thick-body effects

Unification of MOS compact models with the unified regional modeling approach

“…The motivation for unification of various MOS models is to have a core model that is able to capture various MOS device characteristics with seamless transitions in body doping and thickness scaling over the entire range. It has been shown [8,9,[27][28][29][30][31][32][33][34] that the URM approach can achieve such a goal, which can be difficult (if not impossible) for other iterative/explicit φ s -based models.…”

“…For extremely thick body (T Si X dm , where X dm can be tens of micrometers at low doping), one would expect a near-unity slope of dφ s /dV g at low doping (and φ o ≈ 0), which has different physics from the volume inversion. This can be modeled by the URM model [34].…”

“…He introduced a "symmetric imref correction" (SIC) [9,32] for the FB potential φ o as V ds → 0, which physically models the effect due to bipolar (S/D junction) current for V ds ≈ 0, important for higher-order GST and distortion analysis. He proposed a unique drain-induced barrier lowering (DIBL) model [9,34] based on quasi-2D solution that accounts for both DIBL and T Si -dependent subthreshold slope (flatband voltage). He also developed a complete model for SB FinFETs [35,36], with the URM for φ s in the intrinsic channel and thermionic and tunneling current, as well as a subcircuit model for dopant-segregated Schottky (DSS) SiNWs [37,38], with the unique convex curvature in the I ds -V ds characteristics at small V ds and large V gs .…”