A universal large/small signal 3-terminal FET model using a nonquasistatic charge-based approach

Daniels, R. R.; Yang, A.T.; Harrang, J.P.

doi:10.1109/16.277326

Cited by 54 publications

(32 citation statements)

References 22 publications

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“…If present, dispersive effects on the displacement current are assumed to be negligible. On the other hand, nonquasi-static effects at high-frequencies are here neglected on the purely conductive device current, as also widely accepted by many authors [e.g., 5,6]. Since dynamic effects due to dispersive (long-term memory) and nonquasi-static phenomena (short-term memory) are associated to separate current contributions (conductive and displacement, respectively), each of the voltage deviations Dv c , D d may be simply associated in our approach with the modeling of a single kind of dynamics.…”

Section: Gan Large-signal Modelingmentioning

confidence: 96%

“…This is especially true when dealing with GaN-based circuits, since important self-heating and trap states in the energy bands affect the low-frequency behavior of this kind of devices [2][3][4]. In addition, by considering the increasing operating frequencies of many applications, the nonquasi-static effects related to chargecarriers delay [e.g., [5][6][7][8] should be also accurately taken into account.…”

Section: Introductionmentioning

confidence: 99%

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Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach

Santarelli¹,

Giacomo²,

Raffo³

et al. 2008

Int J RF and Microwave Comp Aid Eng

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A new empirical nonlinear model of GaN-based electron devices is presented in the article. The model takes into account low-frequency dispersion due to self-heating and charge-trapping phenomena and provides accurate predictions at frequencies where nonquasi-static effects are important. The model is based on the application of a recently proposed equivalent-voltage approach and is identified by using pulsed measurements of drain current characteristics and pulsed S-parameter sets. Full experimental validation on a GaN on SiC PHEMT is provided at both small-and large-signal operating conditions.

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Section: Gan Large-signal Modelingmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach

Santarelli¹,

Giacomo²,

Raffo³

et al. 2008

Int J RF and Microwave Comp Aid Eng

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show abstract

“…The state-dependent (nonlinear) resistors Rcs(x), RcG(x), RCD(x), have the meaning of charging resistors, and implicitly introduce statedependent delay times for the charge storage process (x is the vector of state variables). Their dynamic effects are similar to those produced by the nonlinear relaxation-time approximation [4]. Thus the assumed topology provides a nonquasi-static charge-storage model while preserving the mathematical simplicity required for efficient nonlinearcircuit simulation by the HB technique [3].…”

Section: Model Descriptionmentioning

confidence: 96%

“…Expressions valid for all values of x2 can be derived for the capacitances as well: (4) CGS(X,T)a2E(x,_T) 32E(x, T) CGS(X T) = _(X2 + -'XjX ax,2 +a1x…”

Section: Model Equations and Constitutive Relationsmentioning

confidence: 99%

A universal electrothermal FET model suitable for general large-signal applications

Rizzoli

Costanzo

Muzzarelli

1996

26th European Microwave Conference, 1996

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A new general-purpose nonlinear MESFET model is proposed. The model is fully conservative to ensure physical consistency in large-signal operation, and accounts for lowfrequency dispersion, 3-rd order intermodulation, and temperature effects. It is valid for positive, zero, and negative drain-source voltages, and can thus be used in all kinds of nonlinear simulations, including active circuits, resistive mixers, and switches.

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“…Therefore, in this case, an equivalentcircuit, shown in Figure 7, is first extracted from bias-dependent S-parameter measurements [8]. The bias-dependent intrinsic parameters provide current and charge partial derivatives [9,10]:…”

Section: Large-signal Mesfet Modelmentioning

confidence: 99%

Small-signal and large-signal modeling of active devices using CAD-optimized neural networks

Giannini¹,

Leuzzi²,

Orengo³

et al. 2001

Int J RF and Microwave Comp Aid Eng

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Artificial neural networks (ANNs) are presented for the technologyindependent modeling of active devices in MMICs. ANNs trained with S-parameter and DC measurements over the entire bias and frequency operational band are used for the small-signal bias-dependent modeling of a low-noise GaAs HEMT device, without the need of the equivalent circuit parameter extraction. ANNs are also used within the large-signal model of a power MESFET device, modeling the drain-source current I ds and charges Q g and Q d obtained from integration of their partial derivatives. After training and testing, the ANN models have been implemented as two-port networks into a microwave circuit simulator. This enabled the ANN models to be used in the design, analysis, and optimization of microwave/mm-wave circuits. Improved techniques in network building to provide not only accurate but also fast simulation models have been applied.

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A universal large/small signal 3-terminal FET model using a nonquasistatic charge-based approach

Cited by 54 publications

References 22 publications

Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach

Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach

A universal electrothermal FET model suitable for general large-signal applications

Small-signal and large-signal modeling of active devices using CAD-optimized neural networks

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