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We have used soft x-ray photoemission spectroscopy (SXPS) to investigate the dependence of Fermi-level pinning on chemical structure at InP–metal interfaces. SXPS core level spectra of Al, Ti, Ni, Au, Pd, Ag, and Cu on UHV-cleaved InP(110) surfaces reveal evidence for semiconductor outdiffusion, metal indiffusion, metal-anion bonding and metal-cation alloying. Corresponding Fermi-level movements indicate a range of pinning positions at significantly different energies within the n-type InP band gap. These results demonstrate that the Schottky barrier heights depend sensitively on changes in interface chemical bonding and diffusion, which strongly affect the type of electrically active sites and interfacial layers formed.

We studied the metal d and 0 2pderived electronic states of RuO» IrO» Ru065Ir03$02 arid Ru077Ilp 2302 by photoemission spectroscopy with synchrotron radiation. Our data are in qualitative agreement with the Ru02 and Ir02 density-of-states curves calculated by Mattheis, which consist of one d-electron peak and three other major peaks with prevailing 0 2p character. The quantitative agreement is reasonably good for Ru0» while discrepancies exist for the lower-energy states of Ir02. Revelation of these discrepancies, not evident from previous photoemission studies, was made possible by the investigation of mixed Ru02-Ir02 crystals.

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