A User's Guide to Vacuum Technology

O’Hanlon, John

doi:10.1002/0471467162

Cited by 314 publications

(311 citation statements)

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“…(5) into 121 × (29=40) 1=2 = 103 since the mean velocity of gas is proportional to M −2 . 25, 26) The observed conductance in the Knudsen flow region shown in Fig. 3 is 5.0 × 10 −13 m 3 =s, such that D 1 is estimated to be 1.0 × 10 2 nm, which is fairly in agreement with the value obtained from the SEM image shown in Fig.…”

Section: Resultssupporting

confidence: 79%

Argon gas flow through glass nanopipette

Takami

Nishimoto

Goto

et al. 2016

Jpn. J. Appl. Phys.

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We have observed the flow of argon gas through a glass nanopipette in vacuum. A glass nanopipette with an inner diameter of 100 nm and a shank length of 3 mm was set between vacuum chambers, and argon gas was introduced from the top of the nanopipette to the bottom. The exit pressure was monitored with an increase in entrance pressure in the range of 50–170 kPa. Knudsen flow was observed at an entrance pressure lower than 100 kPa, and Poiseuille flow was observed at an entrance pressure higher than 120 kPa. The proposed pressure-dependent gas flow method provides a means of evaluating the glass nanopipette before using it for various applications including nanodeposition to surfaces and femtoinjection to living cells.

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Section: Resultssupporting

confidence: 79%

Argon gas flow through glass nanopipette

Takami

Nishimoto

Goto

et al. 2016

Jpn. J. Appl. Phys.

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“…Even if the material flux from the target was composed of only sputter-ejected Cr species (which is not the case as it was shown that numerous N + and N + 2 ions are detected even at lowest f N 2 /Ar [39]), the amount of freshly deposited metal film per pulse would be on the order of 1/100 of a monolayer (ML) for f N 2 /Ar = 0.02 and dropping with increasing f N 2 /Ar increases. On the other hand, the time necessary to convert one ML of deposited Cr into nitride (ML formation time, τ ML ) can be estimated using basic equations of kinetic gas theory [41]. The CrN ML formation time is then given by…”

Section: Resultsmentioning

confidence: 99%

$\hbox{CrN}_{\rm x}$ Films Prepared by DC Magnetron Sputtering and High-Power Pulsed Magnetron Sputtering: A Comparative Study

Greczyński

Jensen

Hultman

2010

IEEE Trans. Plasma Sci.

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Abstract-CrN x (0 ≤ x ≤ 0.91) films synthesized using highpower pulsed magnetron sputtering, also known as high-power impulse magnetron sputtering (HiPIMS), have been compared with those made by conventional direct-current (dc) magnetron sputtering (DCMS) operated at the same average power. The HiPIMS deposition rate relative to the DCMS rate was found to decrease linearly with increasing emission strength from the Cr ions relative to Cr neutrals, in agreement with the predictions of the target-pathway model. The low deposition rate in HiPIMS is thus a direct consequence of the high ionization level (∼56%) of the target material and effective capturing of Cr ions by the cathode potential. Although the HiPIMS deposition rate did not exceed 40% of the DCMS rate, the drop in the relative deposition rate upon increasing the N 2 -to-Ar flow ratio, f N 2 /Ar , was found to be similar for both sputtering techniques. Films prepared by HiPIMS contained similar amounts of atomic nitrogen as the dc-sputtered samples grown at the same f N 2 /Ar , indicating that the nitride formation at the substrate takes place mostly during the time period of the high-power pulses, and the N 2 uptake between the pulses is negligible. The microstructure evolution in the two types of CrN x films, however, differed clearly from each other. A combination of a high substrate bias and a high flux of doubly charged Cr ions present during the HiPIMS discharge led to a disruption of the grain growth and renucleation, which resulted in column-free films with nanosized grains not observed in the conventional DCMS-based process. The comparison of nanoindentation hardness as a function of f N 2 /Ar revealed superior properties of HiPIMS-sputtered films in the entire range of gas compositions.Index Terms-CrN, high-power impulse magnetron sputtering (HiPIMS), high-power pulsed magnetron sputtering, magnetron sputtering.

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“…where n g and š[ g are the density and average speed of the gas, respectively 43) . In addition, the sticking probability must also be taken into account.…”

Section: Resultsmentioning

confidence: 99%

Oxygen Incorporation in Reactive-Sputter-Deposited TiN Films: Influence of the Metal to O2 Gas Flux Ratio

2014

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The incorporation of oxygen impurities under ambient environment conditions during reactive sputter deposition of titanium nitride (TiN)ˆlms has been studied. TiNˆlms, prepared by DC sputtering of a Ti metal target in 100z N 2 at 1 Pa in an ultra-high vacuum (UHV) sputtering apparatus, were essentially free from oxygen. When oxygen was intentionally introduced into the vacuum chamber, an impurity level of a few atomic percent was obtained at a partial pressure of 3×10 -4 Pa, but the percentage increased rapidly to 10-20 at.z when the partial pressure was 1×10 -3 Pa or above. It is shown that the increase in the oxygen incorporation is not well explained by the oxygen impingement rate calculated from the partial pressure. We demonstrate that the impurity concentration is related to the ratio of the number of oxygen atoms introduced into the chamber to the number of Ti atoms sputtered from the target. This suggests that oxygen gettering by Ti atoms deposited on the chamber wall signiˆcantly reduces the oxygen pressure during deposition and that oxygen incorporation in theˆlm is governed primarily by the total amount of sputtered metal.

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A User's Guide to Vacuum Technology

Cited by 314 publications

References 0 publications

Argon gas flow through glass nanopipette

Argon gas flow through glass nanopipette

$\hbox{CrN}_{\rm x}$ Films Prepared by DC Magnetron Sputtering and High-Power Pulsed Magnetron Sputtering: A Comparative Study

Oxygen Incorporation in Reactive-Sputter-Deposited TiN Films: Influence of the Metal to O2 Gas Flux Ratio

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