A UV Light-Emitting Diode Incorporating GaN Quantum Dots

Tanaka, Satoru; Lee, Jeong Sik; Ramvall, Peter; Okagawa, Hiroaki

doi:10.1143/jjap.42.l885

Cited by 45 publications

(37 citation statements)

References 12 publications

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“…Thus, reducing the dimension of the active layer can improve the performance of the GaN-based devices. 6 In this letter, we present a process for the growth of dense InGaN nanodots. The GaN surfaces were pretreated by depositing and removing a SiO 2 thin layer, which modified the GaN surface states.…”

Section: High-density Ingan Nanodots Grown On Pretreated Gan Surfacesmentioning

confidence: 99%

High-density InGaN nanodots grown on pretreated GaN surfaces

Chen

Chua

Tan

2006

Applied Physics Letters

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High-density InGaN nanodots are successfully grown on pretreated GaN surfaces. The GaN surfaces were covered by SiO2 layers firstly, and then the SiO2 layers were removed before the growth of InGaN on the GaN. After this process, the growth of InGaN on the GaN surfaces changed to a three-dimensional mode. However, on the GaN surface without the SiO2 treatment, the growth of InGaN maintained a two-dimensional growth mode as usual. The InGaN nanodots are 26to68nm in diameter, 3.6–15nm in height, and up to 9×1010cm−2 in density, which can be controlled by growth duration and substrate temperature. Comparing with the InGaN thin film grown on untreated GaN surface with the same growth conditions, the InGaN nanodots showed stronger photoluminescence in longer wavelength range at room temperature. The formation mechanism of the nanodots is described based on the GaN surface states changed by SiO2 coverage. This approach enables fabrication of dense and controllable InGaN nanodots.

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Section: High-density Ingan Nanodots Grown On Pretreated Gan Surfacesmentioning

confidence: 99%

High-density InGaN nanodots grown on pretreated GaN surfaces

Chen

Chua

Tan

2006

Applied Physics Letters

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“…Optoelectronic devices fabricated utilizing GaN-related nanostructured materials, such as quantum dots and nanowires, have been extensively studied due to their high optical gains and excellent chemical stabilities [1][2][3][4]. Light-emitting diodes and laser diodes based on GaN materials have emerged as excellent candidates for a new class of lighting, display, and data storage devices [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

UV photovoltaic cells fabricated utilizing GaN nanorod/Si heterostructures

Li¹,

Lee²,

You³

et al. 2010

Journal of Crystal Growth

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“…Group-III nitrides are able to emit blue or violet light because of their wide bandgaps. Various semiconductor optoelectronic devices built from nitride-based QD nanostructures have been studied, e.g., light emitting diodes and laser diodes [1][2][3].…”

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confidence: 99%

Influence of the piezoelectric constant on the electronic structure of wurtzite InGaN quantum dots

Hong

Tsai

Kuo

2010

Phys. Status Solidi (c)

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We investigate the electromechanical fields and transition energies of strained wurtzite InGaN quantum dot nanostructures. Electromechanical fields induced by lattice mismatches in heterostructures, both in and around quantum dots, are analyzed by using fully‐coupled electromechanical equations. The 4×4 Hamiltonian for the wurtzite structure is modified by incorporating the effects of electromechanical fields into the confinement potential and is then analyzed numerically using th the finite element method. The calculated piezoelectric potential is larger if the piezoelectric constant e15 is included in the numerical model. Comparing the cases of e15 = 0 and e15 ≠ 0, we find large discrepancies both in the piezoelectric potential and in the transition energy. This result also suggests that the shear strain effect cannot be neglected for strained wurtzite InGaN quantum dots. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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A UV Light-Emitting Diode Incorporating GaN Quantum Dots

Cited by 45 publications

References 12 publications

High-density InGaN nanodots grown on pretreated GaN surfaces

High-density InGaN nanodots grown on pretreated GaN surfaces

UV photovoltaic cells fabricated utilizing GaN nanorod/Si heterostructures

Influence of the piezoelectric constant on the electronic structure of wurtzite InGaN quantum dots

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