UV photovoltaic cells fabricated utilizing GaN nanorod/Si heterostructures

Li, F.; Lee, S. H.; You, Joo Hyung; Kim, T. W.; Lee, K. H.; Lee, Jun Young; Kwon, Yong-Hwan; Kang, Tae‐Won

doi:10.1016/j.jcrysgro.2010.04.052

Cited by 16 publications

(9 citation statements)

References 26 publications

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“…Previous studies of GaN NWs on Si substrate evidencing a PV conversion employed either p-doped GaN on n-doped Si [28,29] or n-doped GaN on p-doped Si [30,31] to form a p-n junction. However, in our case, the n-doped Si substrate was used for the NW growth and the residual doping of the NWs due to the Si atoms diffusion [32] is also n-type.…”

Section: Resultsmentioning

confidence: 99%

Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates

Neplokh¹,

Ali²,

Julien³

et al. 2016

Materials Science in Semiconductor Processing

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Section: Resultsmentioning

confidence: 99%

Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates

Neplokh¹,

Ali²,

Julien³

et al. 2016

Materials Science in Semiconductor Processing

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“…The maximum open-circuit voltage, the short-circuit current density,and the fill factor were found to be 0.7 V, 146 A/cm 2 , and 0.38, respectively. A power conversion efficiency of about 1% was obtained [43].…”

Section: Photovoltaic Devicesmentioning

confidence: 99%

“…The cell they fabricated had a high short-circuit photocurrent density of 7.6 mA/cm 2 and energy conversion efficiency of 2.73% under AM 1.5G illumination at 100 mW/cm 2 . Li and coworkers [43] reported the growth of close-packed GaN nanorod/Si heterostructures via a hydride vapor phase epitaxy (HVPE) technique and their applications for UV PV cells. The PV cell was illuminated with a UV lamp at a power of 6 W and a wavelength of 365 nm.…”

Section: Photovoltaic Devicesmentioning

confidence: 99%

Synthetic Strategies and Applications of GaN Nanowires

Suo

Jiang

Zhang

et al. 2014

Advances in Condensed Matter Physics

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GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. GaN nanowires have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. In this paper, we provide a comprehensive review on the general synthetic strategies, characterizations, and applications of GaN nanowires. We first summarize several growth techniques of GaN nanowires. Subsequently, we discuss mechanisms involved to generate GaN nanowires from different synthetic schemes and conditions. Then we review some characterization methods of GaN nanowires. Finally, several kinds of main applications of GaN nanowires are discussed.

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“…GaN self-assemblies of 1D nanomaterials (nanowires and nanorods) have been utilized as photocatalytic water splitting [ 129 , 130 ], photovoltaic devices [ 131 , 132 ], piezoelectric nanogenerators [ 65 ], and light-emitting diodes [ 63 ]. Free-standing GaN self-assemblies of 0D nanoparticles have larger surface/volume ratios than these of the GaN 1D nanomaterials.…”

Section: Potential Applications Of Gan Self-assembliesmentioning

confidence: 99%

Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review

Lan

Wong‐Ng

et al. 2016

Micromachines

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Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3.40.277778emnormale-0.21251ptnormalV. GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of the compound while possess novel photoelectric properties of nanomaterials. The review focuses on self-assemblies of GaN nanoparticles without templates, growth mechanisms of self-assemblies, and potential applications of the assembled nanostructures on renewable energy.

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UV photovoltaic cells fabricated utilizing GaN nanorod/Si heterostructures

Cited by 16 publications

References 26 publications

Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates

Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates

Synthetic Strategies and Applications of GaN Nanowires

Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review

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