Synthetic Strategies and Applications of GaN Nanowires

Suo, Guoquan; Jiang, Shuai; Zhang, Juntao; Li, Jianye; He, Meng

doi:10.1155/2014/456163

Cited by 18 publications

(5 citation statements)

References 65 publications

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“…GaN nanowires are commonly realized by bottom-up growth, which has advantages such as low-strain growth, in situ core-shell growth, high alloy incorporation [16], and low dislocation densities [17,18]. However, GaN nanowires fabricated via top-down approaches obviate issues which arise in bottom-up nanowire growth, such as unknown dopant concentration, limited growth regimes, non-uniform growth rates across nanowires, high impurity levels, and a greater number of point-defects [19].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid

Kazanowska¹,

Sapkota²,

Lu³

et al. 2021

Nanotechnology

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The controlled fabrication of vertical, tapered, and high-aspect ratio GaN nanowires via a two-step top-down process consisting of an inductively coupled plasma reactive ion etch followed by a hot, 85% H3PO4 crystallographic wet etch is explored. The vertical nanowires are oriented in the direction and are bound by sidewalls comprising of semipolar planes which are at a 12° angle from the [0001] axis. High temperature H3PO4 etching between 60 °C and 95 °C result in smooth semipolar faceting with no visible micro-faceting, whereas a 50 °C etch reveals a micro-faceted etch evolution. High-angle annular dark-field scanning transmission electron microscopy imaging confirms nanowire tip dimensions down to 8–12 nanometers. The activation energy associated with the etch process is 0.90 ± 0.09 eV, which is consistent with a reaction-rate limited dissolution process. The exposure of the type planes is consistent with etching barrier index calculations. The field emission properties of the nanowires were investigated via a nanoprobe in a scanning electron microscope as well as by a vacuum field emission electron microscope. The measurements show a gap size dependent turn-on voltage, with a maximum current of 33 nA and turn-on field of 1.92 V nm−1 for a 50 nm gap, and uniform emission across the array.

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Section: Introductionmentioning

confidence: 99%

Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid

Kazanowska¹,

Sapkota²,

Lu³

et al. 2021

Nanotechnology

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show abstract

“…Different contents of metal in alloys can lead to different conductances. [54,55] For instance, GaAs possess higher saturation electron rate and higher electron mobility. Not only that, oxidation treatment is also an efficient approach to increase the electrical resistivity of liquid metal.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Preparations, Characteristics and Applications of the Functional Liquid Metal Materials

2017

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As new generation functional materials, the recently emerging low-melting liquid metals have displayed many unconventional properties superior to traditional materials. Various methods, such as alloying, oxidizing, adding metals, or non-metallic materials and so on, have been developed to prepare desirable functional materials based on the gallium or more other metals. These methods could not only change the form of the materials, but also endow the original liquid metals with rather diversified performances, which have further expanded the application range of the low-melting liquid metals to meet various needs. This article aims to review and summarize on the fabrication methods, characteristics, and applications of the functional liquid metal materials. Furthermore, the future outlook in this field, including challenges, routes, and related efforts, has also been illustrated and interpreted.

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“…The prospects of InP, GaAs, GaN, and ZnO nanowires have been demonstrated in solar cells, [1] lasers, [2] light emitting diodes (LEDs), [3] high current commutation, [4] photocatalysts, [5] THz and UV radiation sensors, [6,7] and other electronic and photonic applications. [8,9] InP-polymer and InP-InAs coaxial core-shell nanowires have been grown for light management in nanoscale engineering and tuned light emission. [10] GaAs-InAlAs and GaAs-GaAsSb core-shell nanowires have been proposed for high-electron-mobility transistor applications and for performance improvement of optoelectronics devices.…”

Section: Introductionmentioning

confidence: 99%

Porous Semiconductor Compounds with Engineered Morphology as a Platform for Various Applications

Monaico

Ursaki

et al. 2023

Physica Rapid Research Ltrs

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Porous semiconductor compounds represent a class of materials which is under an intense research focus over the last years. Herein, morphologies and topologies produced by anodization in binary semiconductor compounds having various bandgaps and crystallographic orientations are demonstrated with a focus on technological procedures applied for generating arrays of pores with a controlled design. The mechanism of pores growth under the photoresist masks is discussed and the connection between the design of the mask and the architecture of the produced porous structure is disclosed. The evolution of physical characteristics of the materials such as luminescence, optical, photonic, vibrational, hydrophilic, and hydrophobic properties as a result of anodization is investigated. Investigations are performed by means of scanning electron microscopy, photoluminescence and cathodoluminescence spectroscopy, and contact angle measurements. Some possible practical applications of the proposed technological approaches and the produced porous structures are briefly discussed.

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Synthetic Strategies and Applications of GaN Nanowires

Cited by 18 publications

References 65 publications

Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid

Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid

Preparations, Characteristics and Applications of the Functional Liquid Metal Materials

Porous Semiconductor Compounds with Engineered Morphology as a Platform for Various Applications

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