A V-band AlGaAs/InGaAs heterojunction FET MMIC dielectric resonator oscillator

Funabashi, Masahiro; Ohata, K.; Onda, K.; Hosoya, K.; Inoue, Takashi; Kuzuhara, Masaaki; Kanckawa, K.; Kobayashi, Yasuhiro

doi:10.1109/gaas.1994.636912

Cited by 31 publications

(5 citation statements)

References 6 publications

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“…This output power provides the best performance among the oscillators without any buffer amplifiers around -band [17]. In addition, the phase noise is comparable with that of HBT-based oscillators [18] and oscillators with dielectric resonators [5], [19], [20].…”

Section: Oscillation Performance At High Drain Biasmentioning

confidence: 90%

“…There have been several successful developments using dielectric resonators assembled on monolithic microwave integrated circuits (MMIC's) or off-chip [5], [6]. The problem in these oscillators is the difficulty in placing a dielectric resonator in plane.…”

mentioning

confidence: 99%

“…However, the densities in the AlGaAs layers are different; one is 5 10 cm , the other is 3 10 cm . The SH HEMT has a Si-planar doped layer with a sheet carrier density of 5 10 cm in the AlGaAs layer. Table I summarizes the carrier densities.…”

mentioning

confidence: 99%

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V-band high-power low phase-noise monolithic oscillators and investigation of low phase-noise performance high drain bias

Kashiwa

Ishida

Katoh

et al. 1998

IEEE Trans. Microwave Theory Techn.

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This paper reports on the excellent performance of V -band monolithic high electron-mobility transistor (HEMT) oscillators, and discusses oscillation characteristics on drain bias. With regard to output characteristics, double-hetero (DH) HEMT (especially with a high-density Si-planar doped layer) are superior to single-hetero (SH) HEMT's. A monolithic microwave integrated circuit (MMIC) oscillator has been developed with a planar doped DH HEMT and has achieved the peak output power of 11.1 dBm at a 55.9-GHz oscillation frequency. Phase noise of 085 dBc/Hz at 100-kHz offset and 0103 dBc/Hz at 1-MHz offset have been achieved at a drain voltage of 5.5 V and a gate voltage of 0 V. These characteristics have been achieved without any buffer amplifiers or dielectric resonators. This study has revealed that the phase noise decreases as drain voltage increases. This phenomenon is caused by lower pushing figure and lower noise level at a low-frequency range obtained under a high drain voltage. It is because the depletion layer in the channel is extendedto the drain electrode with increase of drain voltage, resulting in the small fluctuation of the gate-to-source capacitance. We also investigate low-frequency noise spectra of AlGaAs/InGaAs/GaAs DH HEMT's with different bias conditions. The low-frequency noise decreases for more than 3 V of the drain voltage. A unique mechanism is proposed to explain this phase noise reduction at high drain voltage.

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Section: Oscillation Performance At High Drain Biasmentioning

confidence: 90%

mentioning

confidence: 99%

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V-band high-power low phase-noise monolithic oscillators and investigation of low phase-noise performance high drain bias

Kashiwa

Ishida

Katoh

et al. 1998

IEEE Trans. Microwave Theory Techn.

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“…Accordingly, several millimeter-wave sources using dielectric resonator oscillators (DRO's) and phase-locked oscillators (PLO's) have been reported [1]- [3]. PLO's are more suitable for monolithic microwave integrated circuit (MMIC) implementation and synthesizer development than DRO's.…”

Section: Introductionmentioning

confidence: 99%

A 20-GHz-band subharmonically injection-locked oscillator MMIC with wide locking range

Kamogawa

Tokumitsu

Toyoda

1997

IEEE Microw. Guid. Wave Lett.

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A monolithic subharmonically injection-locked oscillator (ILO) with wide frequency tuning range using a shunted varactor diode inserted to the oscillation loop is presented. A 20-GHz-band ILO is fabricated that achieves the wide injection locking range of more than 700 MHz at each subharmonic factor up to 32. In addition, the phase-noise degradation rate of the ILO against the subharmonic factor is close to 6 dB/oct. The ILO configuration is extremely suitable for realizing lowcost and low-phase-noise millimeter-wave monolithic microwave integrated circuit (MMIC) sources.

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“…High frequency, stability and tunable low noise oscillators are key components for achieving high performance, and low cost Millimeter-Wave (MMW) applications such as wireless communications and automotive radar systems [1][2][3]. Several oscillators operating at millimeter-wave frequencies using high electron mobility transistor (HEMT) technology have been reported [4]- [6] . The design goal of an MMIC VCO is increasing output power and bandwidth.…”

Section: Introductionmentioning

confidence: 99%

The MMIC VCO Design for Wireless Systems at Ka-Band

Lee¹,

Kim²

2010

Journal of Electrical Engineering and Technology

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-Reconfigurable radio technology is needed to reconstruct frequency and modem functionality, which can be different in various regions. In addition, it makes a single mobile handset capable of supporting various standards of wireless communication and thus plays a key role in mobile convergence. An MMIC VCO (voltage controlled oscillator) has been developed for high power and wide bandwidth where Clapp-Gouriet type oscillators are adapted for series feedback, and was fabricated based on 0.15um pHEMT of TRW. The MMIC VCO was connected to an aluminar substrate on the carrier for testing. This MMIC VCO module showed good performance in comparison to existing works. Furthermore, it can be potentially extended to reconfigure an MMIC VCO for wireless systems such as military applications and satellite communications.

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A V-band AlGaAs/InGaAs heterojunction FET MMIC dielectric resonator oscillator

Cited by 31 publications

References 6 publications

V-band high-power low phase-noise monolithic oscillators and investigation of low phase-noise performance high drain bias

V-band high-power low phase-noise monolithic oscillators and investigation of low phase-noise performance high drain bias

A 20-GHz-band subharmonically injection-locked oscillator MMIC with wide locking range

The MMIC VCO Design for Wireless Systems at Ka-Band

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