2017
DOI: 10.1109/led.2017.2736006
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A Versatile and Accurate Compact Model of Memristor With Equivalent Resistor Topology

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Cited by 15 publications
(7 citation statements)
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“…Limitations of Strukov's model including vacancy boundary exiting the device ends, incorrect current-voltage (I-V) curves at very low frequencies, unwieldy dependence on q(t) etc., are recognized. Zhu et al overcome the issue of ionboundary exiting device ends, by constraining w(t) to stay within device length D [19]. Hong et al operate the HP model without encroaching on violating regions [29].…”
Section: Background a Dual Variable Resistor Modelmentioning
confidence: 99%
See 1 more Smart Citation
“…Limitations of Strukov's model including vacancy boundary exiting the device ends, incorrect current-voltage (I-V) curves at very low frequencies, unwieldy dependence on q(t) etc., are recognized. Zhu et al overcome the issue of ionboundary exiting device ends, by constraining w(t) to stay within device length D [19]. Hong et al operate the HP model without encroaching on violating regions [29].…”
Section: Background a Dual Variable Resistor Modelmentioning
confidence: 99%
“…The continued relevance of modeling is evidenced by recent literature [17]- [19]. Modeling has received attention at various levels of abstraction ranging from vacancy migration [20], [21] to resistance modeling [22] and some that are computationally simple piecewise [23]…”
Section: Introductionmentioning
confidence: 99%
“…However, because of the inherent material property, the intrinsic variation in switching conductance is a major challenge for some applications such as non-volatile memory 22 . Cycle-to-cycle variation is deviation between target conductance and updated conductance when the same updating signal in different updating cycles is applied in a memristor, even when the initial conductance is the same 23 .The memristor-based crossbar arrays suffer from serious cycle-to-cycle variation especially when arrays are used in the neuromorphic computing system that the conductance of memristor needs to be updated innumerable times during the training and testing process [24][25][26][27][28] . In previous works, researchers proposed some solutions including three aspects to mitigate such impact of the cycle-to-cycle variation.…”
Section: Introductionmentioning
confidence: 99%
“…However, memristor has its limitations as a novel device. Still now, most memristors' fabrications [15][16][17][18][19] are not compatible with mainstream integrated circuit technique and have large fluctuations in parameters [20][21][22], which limit their applications in real tasks. Under these technique limitations, realizing memristive characteristics by mature circuit methods [23] becomes a practicable way.…”
Section: Introductionmentioning
confidence: 99%