A Versatile Light‐Switchable Nanorod Memory: Wurtzite ZnO on Perovskite SrTiO₃

Abstract

Integrating materials with distinct lattice symmetries and dimensions is an effective design strategy toward realizing novel devices with unprecedented functionalities, but many challenges remain in synthesis and device design. Here, a heterojunction memory made of wurtzite ZnO nanorods grown on perovskite Nb‐doped SrTiO3 (NSTO) is reported, the electronic properties of which can be drastically reconfigured by applying a voltage and light. Despite of the distinct lattice structures of ZnO and NSTO, a consistent nature of single crystallinity is achieved in the heterojunctions via the low‐temperature solution‐based hydrothermal growth. In addition to a high and persistent photoconductivity, the ZnO/NSTO heterojunction diode can be turned into a versatile light‐switchable resistive switching memory with highly tunable ON and OFF states. The reversible modification of the effective interfacial energy barrier in the concurrent electronic and ionic processes most likely gives rise to the high susceptibility of the ZnO/NSTO heterojunction to external electric and optical stimuli. Furthermore, this facile synthesis route is promising to be generalized to other novel functional nanodevices integrating materials with diverse structures and properties.

A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non‐Volatile Memory Devices

“…Recent reports have explored the use of a variety of external operating parameters, such as the modulation of an applied magnetic fi eld, temperature, or illumination conditions to activate changes in the memristive switching behaviors. [11][12][13][14][15] The introduction of these new stimuli can expand the applicability of memristors to a variety of environments. Among these signal controlling factor choices, the illumination conditions are particularly attractive because photon signals are easier to apply over long distances than electrical signals, and photon signals can effi ciently manage the interactions between circuit devices without disruption by signal interference.…”

Energy-Efficient Hydrogenated Zinc Oxide Nanoflakes for High-Performance Self-Powered Ultraviolet Photodetector

“…Recently, it has been realized that heterostructure system induce internal built-in electric field, which plays a significant role in generating an internal driving force to prevent the recombination of photo induced electron-hole pairs. [2][3][4][5][6][7] Thus, these photodetectors are commonly known as "self-powered", which has recently drawn a great research attention. 2,4 Among UV photodetector materials, zinc oxide (ZnO) is one of the most investigated materials that includes characteristics such as wide direct band gap (3.37 eV), large exciton binding energy (60 meV) at room temperature, piezoelectricity and pyroelectricity etc.…”

Evolution of the SrTiO3–MoO3 Interface Electronic Structure: An in Situ Photoelectron Spectroscopy Study

“…thermally or electrically). 13,14 Thanks to the highly tunable transport property of STO and low activation energies of ionic migrations, a wide range of high-impact electronic devices have been realized. Particularly, resistive switching devices have been demonstrated as a promising nonvolatile memory technology where the resistance states are controlled by an external electrical field.…”