2011
DOI: 10.1016/j.jcrysgro.2011.03.049
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A versatile metal-halide vapor chemistry for the epitaxial growth of metallic, insulating and semiconducting films

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Cited by 19 publications
(15 citation statements)
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“…18 E g (0) for the 10% maximum intensity fit is 1.91 eV matching the calculated band gap. 4 The ratios a/b are, respectively, 1.63 Â 10 À6 and 1.32 Â 10 À6 for these two fits, consistent with other semiconductor materials such as 7.4 Â 10 À7 for silicon and 2.7 Â 10 À6 for GaAs.…”
Section: B Temperature Dependencesupporting
confidence: 71%
“…18 E g (0) for the 10% maximum intensity fit is 1.91 eV matching the calculated band gap. 4 The ratios a/b are, respectively, 1.63 Â 10 À6 and 1.32 Â 10 À6 for these two fits, consistent with other semiconductor materials such as 7.4 Â 10 À7 for silicon and 2.7 Â 10 À6 for GaAs.…”
Section: B Temperature Dependencesupporting
confidence: 71%
“…The details of the metal halide growth chemistry are described elsewhere [10], but in general, the chemistry relies on a series of chemical reactions to form both crystalline metals and oxides. Primarily, lithium getters chlorine from the metal chloride species to produce both LiCl and the metal species.…”
Section: Introductionmentioning
confidence: 99%
“…5 Although these authors succeeded in achieving epitaxial LiNbO 3 films, after publishing two papers, 5,6 they left the field they had started, never to return. This has perhaps more to do with their choice of compound-LiNbO 3 is notoriously difficult to grow 7 -than oxide MBE itself. Spurred by the discovery of hightemperature superconductivity, 8,9 oxide MBE has since been used to grow the oxide superconductors DyBa 2 Cu 3 O 7−δ , [10][11][12][13] The configuration of a MBE system for the growth of multicomponent oxides differs in several important ways from today's more conventional MBE systems designed for the growth of semiconductors.…”
mentioning
confidence: 99%