A versatile spectrometer based on a large-volume Si(Li) p-i-n structure

Radzhapov, A. S.

doi:10.1134/s0020441207040045

Cited by 5 publications

(3 citation statements)

References 1 publication

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“…A special device is designed and prepared. [10] The displacement voltage Utes is set in the range of 0,1-800 V, and the Itestok measurement limits are 1, 10 and 100 μA. It can be seen from this picture that the value of the output current for the entire volume is in the range of 0,5-9 μA at 200 V. This means that the size (diameter of 20 mm, thickness of 2 mm) is homogeneously compensated by lithium ions in the silicon volume.…”

Section: -Vacuum Installed Volume 2 -Heater (Evaporator) 3 -Cover 4sa...mentioning

confidence: 99%

Technological and Electrophysical Characteristics of Receiving Detectors Based on Si (Ge), Si (Li) and Si (Au) Structures With Scintilator Semiconductor

2024

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The scientific significance of the research results is that new technological processes for the preparation of semiconductor detectors based on the Si(Li) p-i-n structure with nuclear radiation were identifed and their electrophysical characteristics were determined. These results are explained by the fact that they are of great importance in the practical application of various semiconductor devices. The practical significance of the research results is the development and implementation of Si(Li) p-i-n structural detectors based on semiconductor monocrystalline silicon.

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Section: -Vacuum Installed Volume 2 -Heater (Evaporator) 3 -Cover 4sa...mentioning

confidence: 99%

Technological and Electrophysical Characteristics of Receiving Detectors Based on Si (Ge), Si (Li) and Si (Au) Structures With Scintilator Semiconductor

2024

Preprint

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“…To obtain the specified characteristics of the large size PSDs, such parameters as the temperature, diffusion annealing time, voltage values, and drift conduction method, are important. The diffusion and lithium ion drift modes are selected in accordance with those proposed in [1,2].…”

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Development and optimization of the production technology of large-size position-sensitive detectors

et al. 2014

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564Semiconductor nuclear radiation detectors, allow ing one to simultaneously determine the energies and locations of particle impacts have lately become irre placeable in studies of scattering processes on solid tar gets when determining the angular distributions of nuclear particles.Position sensitive detectors (PSDs) are being intensely developed for space, medical, and biological studies and for studies in atomic physics too. They have large advantages over other detectors of similar application, namely, the high energy and position res olutions; signal linearity in a wide energy range for particles of different types; insensitivity to magnetic fields; and stability, small overall dimensions, and arriving data processing simplicity.This work presents the results of our performed development and optimization of the production tech nology of semiconductor nuclear radiation PSDs, based on Si(Li) p-i-n large size X ray detectors for tomographic and ecological problems.The production of such detectors requires preci sion physical processes and conditions. They are spec ified by the fact that low energy X ray beams are applied in these systems for generation of electronhole pairs in the sensitive region of a semiconductor detector. The energy resolution in them should be E g < 200-300 eV, being almost limiting for many detectors based on semiconductor crystals. To meet the require ments for the energy resolution, it is necessary to cre ate physical conditions and mechanisms for ensuring the maximum collections of charge carriers, generated due to X ray quantum energy losses. In this case, these conditions should ensure the same result at any point of the sensitive region of the detector and the detector itself should be position sensitive.To solve these problems, it is required to correlate properties of the initial semiconductor crystal (con ductance, homogeneity, imperfection, etc.) and con ditions for providing high efficient p-n or p-i-n semiconductor structures with large sensitive region volumes and thin input windows ("dead layer") on the frontal side of the structure.The creation of Si(Li) p-i-n structures with a sen sitive region diameter of ~100-120 mm and a thick ness >1.5 mm is a technologically complex problem. In particular, it is necessary to create a sufficiently extended, uniformly lithium compensated sensitive region. To obtain the specified characteristics of the large size PSDs, such parameters as the temperature, diffusion annealing time, voltage values, and drift conduction method, are important. The diffusion and lithium ion drift modes are selected in accordance with those proposed in [1, 2].The lithium diffusion was performed in vacuum to a depth of ~500 µm at the temperature t = 500°C. After the diffusion, steps were etched on the plate to obtain a T shaped form. After etching by the polishing etchant in an HF : HNO 3 : CH 3 COOH (1 : 3 : 1) acid mixture and in the aniline etchant, the initial samples had reverse currents I ≤ 10 µA. Then, the lithium ion drift was carried out in samples on...

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“…However, up to date require ments imposed on these detectors lead to the necessity of increasing their sizes up to d > 50-100 mm and W > 2 mm. In this case, physical, technological, and struc tural decisions should take the properties of the initial large size crystal into account in an attempt to meet optimum electrical, radiometric, and spectrometric characteristics of the detectors [6][7][8][9].…”

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Special features of formation of high-performance semiconductor detectors based on αSi-Si(Li) heterostructures

2013

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A production technology of nuclear radiation detectors based on αSi-Si(Li) heterostructures is considered. It is shown that these detectors are more efficient as compared to traditional p-n structures due to a thin near surface ("dead") layer. (a) (b) 3 2 1 4 3 2 1 Fig. 1. Design of the αSi-Si(Li) based detector: (a) detector, view from above; (b) general appearance of the detector; (1) single crystal silicon, compensated by the lithium ion drift method; (2) amorphous layer; (3) aluminum contact; and (4) gold contact.

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A versatile spectrometer based on a large-volume Si(Li) p-i-n structure

Cited by 5 publications

References 1 publication

Technological and Electrophysical Characteristics of Receiving Detectors Based on Si (Ge), Si (Li) and Si (Au) Structures With Scintilator Semiconductor

Technological and Electrophysical Characteristics of Receiving Detectors Based on Si (Ge), Si (Li) and Si (Au) Structures With Scintilator Semiconductor

Development and optimization of the production technology of large-size position-sensitive detectors

Special features of formation of high-performance semiconductor detectors based on αSi-Si(Li) heterostructures

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