A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers

Blokhin, S. A.; Bobrov, M. A.; Maleev, N. A.; Blokhin, A. A.; Kuzmenkov, A. G.; Васильев, А. П.; Rochas, S. S.; Gladyshev, A. G.; Babichev, A. V.; Novikov, I. I.; Karachinsky, L. Ya.; Денисов, Д. В.; Voropaev, K. O.; Ionov, A. S.; Egorov, A. Yu.; Ustinov, V. M.

doi:10.1134/s1063785020090023

Cited by 13 publications

(11 citation statements)

References 13 publications

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“…As a result, the total strain of the layers of the active region was ∼ 0.36% in relation to the InP substrate material. The lateral current and optical confinements were realized in within the BTJ concept [21] by formation in the composite In 0.53 Ga 0.47 As/In 0.53 Al 0.16 Ga 0.31 As of the tunnel junctions of small mesas of the diameter of 4−8 µm by chemical etching of the n ++ -and p ++ -In 0.53 Ga 0.47 As layers with subsequent epitaxial re-growth of the surface relief by the n-InP layer with the modulated doping profile [17]. The mesa etching depth was selected as a compromise between the high output optical power in the single-mode lasing and suppression of the effect of the saturating absorber in the non-pumped parts of the active region, which occurs in a relatively weak transverse optical confinement [22].…”

Section: Experimental Samplesmentioning

confidence: 99%

“…It should be noted that the epitaxial growth of the initial heterostructures of the optical resonator and the DBRs as well as the burial process have been implemented by the MBE method on the industrial unit Riber 49. Other details of the WF-VCSEL heterostructure design are given in the studies [17,22].…”

Section: Experimental Samplesmentioning

confidence: 99%

“…Recently, we have shown the general applicability of the MBE method at all the stages of VCSEL heterostructure creation, including the epitaxial re-growth for formation of the buried tunnel junction (BTJ) [17] and demonstrated the effective WF-VCSELs of the spectral range of 1300 nm [18,19].…”

Section: Introductionmentioning

confidence: 99%

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1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers

et al. 2022

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The results of complex studies of static and dynamic performance of 1550 nm-range VCSELs, which were created by direct bonding (wafer fusion technique) InAlGaAs/InP optical cavity wafers with AlGaAs/GaAs distributed Bragg reflector wafers grown by molecular beam epitaxy, are presented. The VCSELs with a buried tunnel junction diameter less than 7 μm demonstrated a single-mode lasing with a side-mode suppression ratio more than 40 dB; however, at diameters less than 5 μm, a sharp increase in the threshold current is observed. It is associated to the appearance of a saturable absorber due to penetration of optical mode into the non-pumped regions of the active region. The maximum single-mode output optical power and the -3 dB modulation bandwidth reached 4.5 mW and 8 GHz, respectively, at 20oC. The maximum data rate at 20oC under non-return-to-zero on-off keying modulation was 23 Gb/s for a short-reach link based on single-mode fiber SMF-28. As the length of the optical link increased up to 2000 m, the maximum data rate dropped to 18 Gbit/s. The main factors affecting the high-speed operation and data transmission range are defined and discussed, and the further ways to overcome themit are proposed. Keywords: VCSEL, wafer fusion, molecular beam epitaxy, single-mode operation, high-speed performance.

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Section: Experimental Samplesmentioning

confidence: 99%

Section: Experimental Samplesmentioning

confidence: 99%

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1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers

et al. 2022

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“…Long-wavelength vertical cavity surface-emitting lasers (VCSELs) are promising radiation sources for radiophotonics devices design, utilized in information-telecommunication and computer systems for high-speed data transmission, and are widely used in the quantum random number generators [1][2][3][4][5]. One of the factors explaining the VCSELs popularity in telecommunication devices is the rich variety of polarization phenomena (unstable polarization behavior), suitable for improving the randomness of generated bit sequences and increasing security for highspeed chaos multiplexing [6].…”

Section: Introductionmentioning

confidence: 99%

Polarization Instabilities in Vertical-Cavity Surface-Emitting Lasers

Apanasevich¹,

Petrenko²,

Bougrov³

2022

Rev Adv Mater Tech

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We report on experimental investigation of short-period InGaAs/InGaAlAs superlattice vertical cavity surface emitting lasers characteristics (VCSEL), including light-current-voltage characteristics, optical and radiofrequency spectra and polarization mode hopping between orthogonal modes. The observed polarization switching features is similar to what is observed in quantum well VCSEL. Future investigations will consider polarization-resolved optical and radiofrequency spectra, total intensity noise analysis of VCSEL biased near the polarization switching point.

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“…In the design of such VCSELs, the n + / p + -InAlGaAs TJ is widely used to reduce the level of optical losses, which makes it impossible to heal the surface relief formed in the TJ layers within the framework of the molecular-beam epitaxy technology. Relatively recently, we have shown the possibility in principle for effective application of the molecular beam epitaxy method at all stages of the epitaxial growth of long-wavelength VCSEL heterostructures [5]. In addition, effective WF-VCSELs in the 1.3 µm spectral range based on short-period superlattice of InGaAs/InGaAlAs were presented [6].…”

mentioning

confidence: 99%

Analysis of internal optical loss of 1.3 μm vertical-cavity surface-emitting laser based on n-=SUP=-++-=/SUP=--InGaAs/p-=SUP=-++-=/SUP=--InGaAs/p-=SUP=-++-=/SUP=--InAlGaAs tunnel junction

S.A.

Bobrov

A.A.

et al. 2022

Technical Physics Letters

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The analysis of internal optical loss and internal quantum efficiency in 1.3 μm-range InAlGaAsP/AlGaAs a composite n+-InGaAs/p+-InGaAs/p+-InAlGaAs tunnel junction obtained in the frame of molecular-beam epitaxy and wafer fusion technology. The level of internal optical losses in the lasers under study was varied by depositing a dielectric layer on the surface of the output mirror. It is shown that it is possible in principle to achieve low internal optical loss of less than 0.08% and 0.14% per one pass (round-trip) at temperatures of 20oC and 90oC, respectively. Keywords: vertical-cavity surface-emitting laser, wafer fusion, tunnel junction, superlattice, internal optical loss.

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A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers

Cited by 13 publications

References 13 publications

1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers

1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers

Polarization Instabilities in Vertical-Cavity Surface-Emitting Lasers

Analysis of internal optical loss of 1.3 μm vertical-cavity surface-emitting laser based on n-=SUP=-++-=/SUP=--InGaAs/p-=SUP=-++-=/SUP=--InGaAs/p-=SUP=-++-=/SUP=--InAlGaAs tunnel junction

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