A vertical injection blue light emitting diode in substrate separated InGaN heterostructures

Song, Yoon‐Kyu; Diagne, M.; Zhou, Hailong; Nurmikko, A. V.; Carter-Coman, C.; Kern, R. S.; Kish, F. A.; Krames, Michael R.

doi:10.1063/1.123232

Cited by 46 publications

(25 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The blue GaN-based LEDs and edge emitting LDs have been developed in recent years. The research interest has gradually shifted to the development and demonstration of GaN-based vertical cavity surface emitting lasers (VCSELs) [1][2][3][4] and resonant-cavity light-emitting diodes (RCLEDs) [5][6][7][8][9][10]. An important requirement for the operation of such devices is the need of high reflectance mirrors, usually in the form of distributed Bragg reflectors (DBRs).…”

Section: Introductionmentioning

confidence: 99%

MOCVD growth of AlN/GaN DBR structures under various ambient conditions

Yao

Lin

Kuo

et al. 2004

Journal of Crystal Growth

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

MOCVD growth of AlN/GaN DBR structures under various ambient conditions

Yao

Lin

Kuo

et al. 2004

Journal of Crystal Growth

View full text Add to dashboard Cite

“…Nakada et al reported that considerably higher output power was obtained from a GaInN LED after inserting a DBR between the LED structure and sapphire substrate [1]. Since thin-film laser lift-off (LLO) techniques have recently been developed [2][3][4], GaN-based LEDs fabricated on reflective-metal-mirrorcoated Si substrates by transferring the LED structures from sapphire substrates have been demonstrated [5]. In comparison with this, epitaxial DBR GaN-based LEDs on Si can be grown through one growth process, providing an advantage of a simple process.…”

Section: Introductionmentioning

confidence: 98%

GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si

Ishikawa

Jimbo

Egawa

2008

Phys. Status Solidi (c)

View full text Add to dashboard Cite

We report the effect of inserting a lattice‐matched AlInN/GaN distributed Bragg reflector (DBR) on the performance of GaInN light emitting diodes (LEDs) on Si substrates. The lattice‐matched AlInN/GaN DBR is superior to the previously used AlGaN/AlN DBR with respect to the suppression of cracking and the interface smooth ness. The light output power (PEL) of the LED increases with increasing number of pairs in the DBR and agrees well with the calculated one. The PEL of the 14.5‐pair AlInN/GaN DBR LED is about 3.6‐fold higher than that of the non‐DBR LED. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…Therefore, devices fabricated on an electrically and thermally conducting substrate by separating sapphire substrate, are most desirable. Recently, the Laser lift-off (LLO) technique has been used to fabricate the freestanding InGaN LEDs [1,2] and LDs [3] as well as the creation of GaN substrate.…”

mentioning

confidence: 99%

Cathodoluminescence study of InGaN MQW laser diodes using laser lift‐off technique

Kang

et al. 2007

Phys. Status Solidi (c)

View full text Add to dashboard Cite

In this paper, spatially integrated or spatially resolved cathodoluminescence (CL) spectroscopy were employed to evaluate the structural and optical changes of InGaN multiple quantum well (MQW) structure before and after Laser lift-off (LLO) process. As for a partially strain-relaxed In 0.1 Ga 0.9 N MQW laser diode (LD) structure with cracking in underlying epitaxial layers, LLO did not cause the blue shift in CL spectra as expected, but rather the red shift induced by the indium diffusion from its abundant regions around cracks. This result could be proved by the monochromated scanning CL images taken at 390 nm and 408 nm not having the same obvious complementary as those of original ones. Compared with calculated laser fluence for LLO, this phenomenon could be mainly attributed to the easy penetration of laser energy via cracks and consequent irradiation absorption within MQWs.1 Introduction Due to difficulties in the growth of bulk GaN, most of III-nitride optoelectronics devices are grown heteroepitaxially on dissimilar sapphire substrates. For III-nitride laser diodes (LDs), a major impediment still remains the efficient dissipation of heat generated from the active area of the device. The high thermal resistance of the sapphire substrate and the relatively high current densities combine to degrade the device performance and lifetimes due to the excessive heating during operation. Therefore, devices fabricated on an electrically and thermally conducting substrate by separating sapphire substrate, are most desirable. Recently, the Laser lift-off (LLO) technique has been used to fabricate the freestanding InGaN LEDs [1, 2] and LDs [3] as well as the creation of GaN substrate.Because of the particular way to accomplish LLO via absorption of laser irradiation within the interface between substrate and epitaxial films, the impacts of LLO on luminescence properties of InGaN MQWs would be complicated by the massive strain-induced cracks commonly seen in the LD structure. In order to evaluate the structural and optical qualities of LD structure before and after LLO, CL in the scanning electron microscope (SEM) had been utilized to study plan-view samples. According to the CL spectra taken at different acceleration voltages (15 kV, 20 kV, 25 kV) before LLO, it was found that indium concentration around cracks which were caused by strain relaxation of underlying layers during growth, was much higher than other regions. After LLO, CL images of the MQWs taken at 390 nm and 408 nm did not have the same obvious complementary as before. Since the spatial homogeneity of CL imaging correlates to the In phase separation in high indium-containing MQWs grown by MOCVD [4], these results indicated that diffusion of indium in solid phase had taken place, considering laser irradiation could readily penetrate the n-type sections beneath MQWs through cracks and be absorbed by them.

show abstract

A vertical injection blue light emitting diode in substrate separated InGaN heterostructures

Cited by 46 publications

References 9 publications

MOCVD growth of AlN/GaN DBR structures under various ambient conditions

MOCVD growth of AlN/GaN DBR structures under various ambient conditions

GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si

Cathodoluminescence study of InGaN MQW laser diodes using laser lift‐off technique

Contact Info

Product

Resources

About