I 52 1 (51 J. M. Dorkel and P. Leturcq, "Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level," Solid-StateAbstract-The spreading resistance error in the vertical Kelvin test resistor (VTR) structure is studied based on an analytic approach. It is found that it is always less than the error existing in the horizontal test structures and can be expressed as Rsz: / C, where R, and zj are the sheet resistance and the junction depth of the conductor resistor, respectively, and C is a factor approximately equal to 2.