The spreading resistance error in the vertical Kelvin test resistor structure for the specific contact resistivity

Lee, C.L.; Yang, Wen; Lei, Tan Fu

doi:10.1109/16.2489

Cited by 4 publications

(1 citation statement)

References 10 publications

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“…Complementary metal-oxide-semiconductor (CMOS) image sensors are being regarded as a future choice among solid-state image sensors for applications requiring low-power, low-cost and CMOS technology compatibility [1][2][3][4]. Pixel structures of the CMOS image sensor popularly used these days are so-called three-transistor (3-TR) and four-transistor (4-TR) pixels, distinguished by the number of transistors within a unit pixel.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of transfer transistors with pure and nitirided gate oxides in four-transistor CMOS image pixels

Song¹,

Sivongsay²,

Mounphoumy³

et al. 2008

Semicond. Sci. Technol.

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Transfer transistors having pure (TX-TR-PO) and nitrided (TX-TR-NO) gate oxides in four-transistor CMOS image pixels were electrically characterized by both 1/f noise and static measurements. Reduced 1/f noise levels in TX-TR-NO denoted that nitridation of oxides contributed to maintaining the p+ surface passivation layer highly doped near its gate-edge, by suppressing boron out-diffusion into gate-poly. Although TX-TR-NO in this study had a relatively high potential barrier at the photodiode/TX-TR interface, the static conductance analysis showed that the barrier could be sufficiently lowered in real pixel operations through either 'deep depletion' or 'floating-diffusion voltage-induced barrier lowering'. Moreover, the potential barrier existing in TX-TR-NO was suggested to play a key role in reducing the sensor module's dark current level, kTC noise and image lag failure rates by preventing charge's flowing back to photodiode during TX-TR's transition from 'off' to 'on'. The proposed TX-TR design is expected to effectively improve the charge transfer characteristics of CMOS image pixels, especially under low operation voltage conditions ( 2.5 V).

show abstract

Section: Introductionmentioning

confidence: 99%

Electrical characterization of transfer transistors with pure and nitirided gate oxides in four-transistor CMOS image pixels

Song¹,

Sivongsay²,

Mounphoumy³

et al. 2008

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

Contact resistivities of Al and Ti on Si measured by a self-aligned vertical Kelvin test resistor structure

Yang

Lei

Lee

1989

Solid-State Electronics

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A self-aligned vertical Kelvin test structure to measure contact resistivities of Al and Ti on Si

Yang

Lei

Lee

Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference

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A self-aligned vertical Kelvin test resistor structure (SAVTR), which not only eliminates the horizontal current crowdin errors but also avoids the misali nment contact system, a specific contact resistivity of lxlO-7R-cm2 has been measured. For the TiSi, contacts, the TiSi2(direct-reaction) /n+-Si contact offers a lower pc than that of the TiSi2(coevaporation) n+-Si contact and pcdoes not change even error$ proposed and used to measure p,o f A1 and Ti on Si. For the Al(l%SiT/n+-Si after the contacts are annealed to 900° I .

show abstract

The spreading resistance error in the vertical Kelvin test resistor structure for the specific contact resistivity

Cited by 4 publications

References 10 publications

Electrical characterization of transfer transistors with pure and nitirided gate oxides in four-transistor CMOS image pixels

Electrical characterization of transfer transistors with pure and nitirided gate oxides in four-transistor CMOS image pixels

Contact resistivities of Al and Ti on Si measured by a self-aligned vertical Kelvin test resistor structure

A self-aligned vertical Kelvin test structure to measure contact resistivities of Al and Ti on Si

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