Good mechanical and chemical stabilities are the key factors for the wide application of superhydrophobic surfaces. In this work, we first prepared raspberry-like hollow structured SnO 2 nanoparticles using a simple hydrothermal method, followed by an annealing step. Then, the intrinsic raspberry-like hollow SnO 2 nanoparticles were combined with hydrophilic SiO 2 nanoparticles to construct rough surfaces with suitable hierarchical structures, and 1H,1H,2H,2Hperfluorodecyltriethoxysilane (FAS-17) was used as a hydrophobic modifier of SnO 2 , while epoxy resin was used as an adhesive to prepare a superamphiphobic coating with good stability and durability. Such a coating can be applied on various substrates using a simple spray-coating or drop-coating method. The water contact angle and diiodomethane contact angle of the coating could reach up to ∼165 and ∼151°, respectively. After various chemical and mechanical stability tests including hot water treatment, salt water corrosion, strong adhesive tape peeling, and kneading, the coatings still remained amphiphobic. The facile fabrication of the robust superhydrophobic coating has great potential for applications in real life and industrial production.

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An intergranular fracture feature could be observed when ferritic spheroidal graphite cast irons were tested under continuously wet conditions. The maximum depth of intergranular fractures was closely related to the microstructural feature and ambient environment that caused the deterioration in vibration fracture resistance. Experimental evidence has confirmed the overall D-N curves can be generalized into three characteristic regions. Intergranular fractures occurred in the vicinity of the surface; the existence of nodular graphite act as porosity should be considered as a dominant microstructural factor on the initiation of intergranular fractures. On the other hand, intergranular fractures can be prevented resulting in better vibration fracture resistance when a specimen of ferritic SG cast iron is covered with oil film, or if an identical test is performed using the Fe-3Si steel specimen containing no nodular graphite.

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Abstract-This letter presents an electrical method to reduce dark current as well as increase well capacity of four-transistor pixels in a CMOS image sensor, utilizing a small negative offset voltage to the gate of the transfer (TX) transistor particularly only when the TX transistor is off. As a result, using a commercial pixel in a 0.18 µm CMOS process, the voltage drop due to dark current of the pinned photodiode (PPD) is reduced by 6.1 dB and the well capacity is enhanced by 4.4 dB, which is attributed to the accumulated holes and the increased potential barrier near the PPD, respectively.Index Terms-CMOS image sensor (CIS), dark current, fourtransistor pixel, hole accumulation diode, imager, pinned photodiode (PPD), well capacity.