Abstract:Transfer transistors having pure (TX-TR-PO) and nitrided (TX-TR-NO) gate oxides in four-transistor CMOS image pixels were electrically characterized by both 1/f noise and static measurements. Reduced 1/f noise levels in TX-TR-NO denoted that nitridation of oxides contributed to maintaining the p+ surface passivation layer highly doped near its gate-edge, by suppressing boron out-diffusion into gate-poly. Although TX-TR-NO in this study had a relatively high potential barrier at the photodiode/TX-TR interface, … Show more
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