A vertical structure photodetector based on all‐inorganic perovskite quantum dots

Abstract

In this work, the vertical structure photodetector based on CsPbBr3 quantum dots (QDs) with a structure of indium tin oxide (ITO)/zinc oxide (ZnO)/CsPbBr3 QDs/Au is reported. In this device, CsPbBr3 QDs film works as the light‐harvesting layer, and ZnO QDs film acts as the electron transport channel, which can extract the electron efficiently and improve the quality of CsPbBr3 QDs film. As a result, the on/off ratio, detectivity and rise time (decay time) of CsPbBr3/ZnO hybrid photodetector are measured to be 2.4 × 106, 2.25 × 1011, and 62 milliseconds (82 ms) under 0‐V bias. This work inspires the development of vertical structure photodetectors based on the all‐inorganic perovskite QDs.

Cesium Lead Bromide (CsPbBr3) Perovskite Quantum Dot-Based Photosensor for Chemiluminescence Immunoassays

“…In addition, the interaction between the atoms within the crystal was strengthened, as estimated by the XPS analysis. Layered structures have been used to improve the stability of nanomaterials, subsequently involving the intercalation of nanomaterials such as MoS 2 , ZnO, and graphene between the layers. − ,, In this study, the charge-transfer layer made of MoS 2 nanoflakes was used for the fabrication of a photosensor.…”

“…To improve the sensitivity, charge-transfer layers such as ZnO, graphene, TiO 2 , and CdS have also been used in photosensors based on CsPbX 3 NCs. ,− These charge-transfer layers have been used to improve the efficiency of the separation of electron–hole pairs owing to their high electron mobility. These layers accelerate the charge carrier transport and enhance the sensitivity of the photosensors.…”

A method to improve the performance of all-inorganic halide perovskite CsPbBr3 memory

“…The film of Au/CsPbBr 3 /ZnO/FTO device has fewer pinholes and cracks than the pristine CsPbBr 3 films, which can significantly reduce the possibility of short-circuiting the device. It is because the ZnO as a barrier layer isolates the direct touch between Au and FTO [25][26][27]. To confirm the conformance of the device's performance, four points were stochastically selected in the composite device and for these.…”

Recent advances in synthesis and application of perovskite quantum dot based composites for photonics, electronics and sensors

“…Hence, the difference in band gap leads to efficient charge separation while the easy electron injection means fast electron transfer from HP-QDs to the oxide which ensures higher responsivity [117,155,156]. With these merits, the HP-QDs/TiO 2 composite was applied as a great sensitizer where TiO 2 play the role of n-type semiconductor [111,[157][158][159].…”