A Very Fast Three-Dimensional Impurity Profile Simulation Incorporating An Accumulated Diffusion Length and Its Application to the Design of Power MOSFETs

Abstract

b~entral ~e i e a r c h ~a b o r a t o j , ~i t a c h i , Ltd., -1-280, Higashi-koigakubo Kokubunji, Tokyo 185, Japan AbstractIn this paper, we introduce a method for the fast simulation of 3D impurity profile simulation We analytically integrated the approximated non-linear transport equation and derived an analytical equation of 3D non-linear diffusion by introducing a new physical parameter, called the Accumulated Diffusion Length (ADL). This method allows us to simulate a 3D-profile by using a coupled 1D simulator and analytical equations, where the ADL is obtained during 1D simulation. Our new methodology is implemented in the 3D process simulator, SPIRIT-IWADL. Our 3D-TCAD system composed of SPIRIT-IIIIADL and our in-house device simulator was applied to the design of 3D-shaped power MOSFETs.