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Silicon oxidation enhancement in the thin oxide region is investigated by studying activation energy dependence on SiO2 thickness using the Arrhenius plot of oxidation rates. The enhancement of the activation energy is found to occur at approximately 30 Å SiO2 thickness. The change of the oxidation-limiting process from surface reaction enhancement to oxidant diffusion retardation can provide an explanation of this activation energy enhancement. This model also provides a consistent view of previous experiments in the thin region.

A simulator using the coupled Schr ödinger equation, the Poisson equation and Fermi-Dirac statistics to analyse inversion-layer quantization has been shown to match the measured C -V data of thin-gate-oxide metal-oxide semiconductor (MOS) capacitors closely. This simulator is used to study in detail the effects of bias voltage, oxide thickness and doping concentration on the charge centroid and from this a simple empirical model for the dc charge centroid of the inversion layer is proposed. This model predicts the inversion charge density in terms of T ox , V t and V g explicitly and can be used to estimate transistor current in device engineering and circuit simulation models.

A simulator using a coupled Schrödinger equation, Poisson equation and Fermi–Dirac statistics to analyze inversion layer quantization is shown to match the measured capacitance versus voltage data of thin oxide gate metal-on-insulator capacitance closely. The effects of bias voltage, oxide thickness and doping concentration on the charge centroid are presented. A simple empirical model for the alternating current charge centroid of the inversion layer is proposed. This model predicts the in-version layer capacitance or charge centroid in terms of Tox (oxide thickness), Vt (threshold voltage), and Vg (gate voltage) explicitly.

Temperature dependence of threshold voltage fluctuation is evaluated using the Device Matrix Array-TEG. No remarkable threshold voltage fluctuation increase at high temperature is observed. It is also revealed that Takeuchi plot, which is developed for normalization of threshold voltage fluctuation, has applicability at high temperature. Area3_5552 1 ページ