Activation energy enhancement during initial silicon-oxide growth in dry oxygen

Kamohara, Shiroo; Kamigaki, Yoshiaki

doi:10.1063/1.347520

Cited by 15 publications

(6 citation statements)

References 18 publications

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“…This incorporation process has an activation energy of 2.3 eV . For comparison, the silicon oxidation is characterized by an activation energy of 2.05 eV. , Hence, the oxidation of the a-Si without prior arsenic activation (Figure f) is expected to proceed similarly to that of the nonimplanted a-Si (Figure d).…”

Section: Results and Discussionmentioning

confidence: 99%

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Self-Limited Formation of Bowl-Shaped Nanopores for Directional DNA Translocation

et al. 2021

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Solid-state nanopores of on-demand dimensions and shape can facilitate desired sensor functions. However, reproducible fabrication of arrayed nanopores of predefined dimensions remains challenging despite numerous techniques explored. Here, bowl-shaped nanopores combining properties of ultrathin membrane and tapering geometry are manufactured using a self-limiting process developed on the basis of standard silicon technology. The upper opening of the bowl-nanopores is 60–120 nm in diameter, and the bottom orifice reaches sub-5 nm. Current–voltage characteristics of the fabricated bowl-nanopores display insignificant rectification indicating weak ionic selectivity, in accordance to numerical simulations showing minor differences in electric field and ionic velocity upon the reversal of bias voltages. Simulations reveal, concomitantly, high-momentum electroosmotic flow downward along the concave nanopore sidewall. Collisions between the left and right tributaries over the bottom orifice drive the electroosmotic flow both up into the nanopore and down out of the nanopore through the orifice. The resultant asymmetry in electrophoretic–electroosmotic force is considered the cause responsible for the experimentally observed strong directionality in λ-DNA translocation with larger amplitude, longer duration, and higher frequencies for the downward movements from the upper opening than the upward ones from the orifice. Thus, the resourceful silicon nanofabrication technology is shown to enable nanopore designs toward enriching sensor applications.

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Section: Results and Discussionmentioning

confidence: 99%

“…42 For comparison, the silicon oxidation is characterized by an activation energy of 2.05 eV. 43,44 Hence, the oxidation of the a-Si without prior arsenic activation (Figure 1f) is expected to proceed similarly to that of the nonimplanted a-Si (Figure 1d). Electroosmotic Flow Distribution and Ionic Selectivity.…”

Section: Resultsmentioning

confidence: 99%

Self-Limited Formation of Bowl-Shaped Nanopores for Directional DNA Translocation

et al. 2021

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“…These oxygen atoms (or oxygen ions) will relax if their energy is less than the reaction activation energy (2 eV) of an oxygen atom in the crystalline silicon. [29] Moreover, excessive silicon ions of the SiO x /c-Si interface have come into being in the intentional oxidation process. [16] The relaxation oxygen atoms (or oxygen ions) will react with excessive silicon ions under low-temperature annealing for 30 min, partially repairing the SiO x /c-Si interface damage and reducing the interface states.…”

Section: Effect Of Vacuum Annealing On Effective Minority Carrier Lif...mentioning

confidence: 99%

Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiO x /Si system

Gao

Yang

et al. 2017

Chinese Phys. B

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The damage on the atomic bonding and electronic state in a SiO x (1.4-2.3 nm)/c-Si(150 µm) interface has been investigated. This occurred in the process of depositing indium tin oxide (ITO) film onto the silicon substrate by magnetron sputtering. We observe that this damage is caused by energetic particles produced in the plasma (atoms, ions, and UV light). The passivation quality and the variation on interface states of the SiO x /c-Si system were mainly studied by using effective minority carrier lifetime (τ eff ) measurement as a potential evaluation. The results showed that the samples' τ eff was reduced by more than 90% after ITO formation, declined from 107 µs to 5 µs. Following vacuum annealing at 200 • C, the τ eff can be restored to 30 µs. The components of Si to O bonding states at the SiO x /c-Si interface were analyzed by x-ray photoelectron spectroscopy (XPS) coupled with depth profiling. The amorphous phase of the SiO x layer and the "atomistic interleaving structure" at the SiO x /c-Si interface was observed by a transmission electron microscope (TEM). The chemical configuration of the Si-O fraction within the intermediate region is the main reason for inducing the variation of Si dangling bonds (or interface states) and effective minority carrier lifetime. After an appropriate annealing, the reduction of the Si dangling bonds between SiO x and near the c-Si surface is helpful to improve the passivation effect.

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“…5 It has also been argued that the activation energy varies with the thickness regime. 5,25,27 Disagreement among the past studies is mainly due to the fact that different values of the activation energy may be deduced if different kinetic models are employed for data analyses. 11,28 Another factor to be considered in the thickness regime less than 10 nm is the error in the ellipsometric thickness measurements.…”

Section: B Layer-resolved Determination Of the Activation Energymentioning

confidence: 99%

Layer-resolved kinetics of Si oxidation investigated using the reflectance difference oscillation method

Yasuda

Kumagai²,

Nishizawa

et al. 2003

Phys. Rev. B

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Dry oxidation kinetics of the Si͑001͒ surface has been investigated using reflectance difference oscillation to resolve atomic-scale phenomena. The activation energy for oxidation has been found to increase as the oxide-Si interface moves in the depth direction, reaching the value for bulk oxidation, 2.0 eV, at the third layer from the surface. The nonlinear dependence of the oxidation rate on the O 2 pressure, which was reported for bulk oxidation, has also been observed in the second-and third-layer oxidation. Chemical reaction and mass transport mechanisms for this initial oxidation regime are discussed.

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Activation energy enhancement during initial silicon-oxide growth in dry oxygen

Cited by 15 publications

References 18 publications

Self-Limited Formation of Bowl-Shaped Nanopores for Directional DNA Translocation

Self-Limited Formation of Bowl-Shaped Nanopores for Directional DNA Translocation

Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiO x /Si system

Layer-resolved kinetics of Si oxidation investigated using the reflectance difference oscillation method

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