Small signal electron charge centroid model for quantization of inversion layer in a metal-on-insulator field-effect transistor

King, Y.C.; Hu, Chenming; Fujioka, Hiroshi; Kamohara, Shiroo

doi:10.1063/1.121671

Cited by 10 publications

(4 citation statements)

References 6 publications

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“…The C-V curve profile will be affected by the quantum-mechanical effect when the oxide is very thin. 23) Therefore, equivalent oxide thickness (EOT) was determined from the C-V curve in a strong accumulation region at À3 V. The result takes the quantum-mechanical effects 24) into account and the EOT of oxynitride is estimated as 18 A ˚. Figure 9 shows the C-V shift of P þgated samples for the ultrathin oxynitride (23 A ˚) and conventional oxide (30 A ˚) with annealing at 900 C for various times (60, 90 and 120 min).…”

Section: Resultsmentioning

confidence: 99%

Robust Ultrathin Oxynitride with High Nitrogen Diffusion Barrier near its Surface Formed by NH₃ Nitridation of Chemical Oxide and Reoxidation with O₂

Lai

Lin²,

Chang

et al. 2006

jjap

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We have proposed an approach for growing robust ultrathin oxynitride using conventional thermal processes with the capability of preventing boron penetration. In this method, we obtain oxynitride with high nitrogen concentration (≈13 at. %) on the top and low interface state density (Dit=2×1010 cm-2 eV-1). The films demonstrate excellent properties in terms of low Dit, low leakage current, high endurance in stressing and superior boron diffusion blocking behavior. This method does not involve any additional capital equipment [such as decoupled plasma nitridation (DPN) or remote plasma nitridation (RPN)] or gas (NO or N2O). In addition, it obtains high-quality oxynitride film with low thermal budget. Most importantly, this process is simple and fully compatible with current process technology. It would be important and interesting for process engineers engaged in the field of gate dielectrics. It is suitable for the next generation of ULSI technology.

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Section: Resultsmentioning

confidence: 99%

Robust Ultrathin Oxynitride with High Nitrogen Diffusion Barrier near its Surface Formed by NH₃ Nitridation of Chemical Oxide and Reoxidation with O₂

Lai

Lin²,

Chang

et al. 2006

jjap

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“…The physical gate oxide thicknesses were extracted by comparing the measured tunneling current with the theoretical tunneling current [7] and confirmed in Fig. 1 by matching the measured high frequency PMOS CV data with simulated curves obtained using a one-dimensional (1-D) self-consistent Schrödinger and Poisson equation solver [8]. As the oxygen implant dose increases, it is found that the effective substrate doping, and thus jV t j, also rises as a result of thermal donor generation from excess oxygen [9] and transient enhanced dopant diffusion in the channel due to implant damage [10].…”

Section: Oxide and Transistor Characteristicsmentioning

confidence: 98%

Optimization of sub-5-nm multiple-thickness gate oxide formed by oxygen implantation

King¹,

Kuo

King

et al. 2001

IEEE Trans. Electron Devices

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A new method of growing multiple gate oxide thicknesses below 5 nm using masked oxygen implantation is presented. Multiple thicknesses can be achieved on the same wafer without degradation in the oxide properties. The oxygen implanted oxide quality is comparable to that of thermally grown oxides. Moreover, the effects of oxygen implant damage is minimized with higher implant energies, thicker sacrificial oxides, and low-temperature annealing.

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“…Later, from self-consistent results, King et al [49] proposed an empirical model that expresses the position of the charge centroid of the inversion layer in terms of gate voltage (V G ), threshold voltage (V th ), and oxide thickness (t ox ) explicitly as…”

Section: Increase In Effective Oxide Thicknessmentioning

confidence: 99%

Quantum Mechanical Effects in Bulk MOSFETs from a Compact Modeling Perspective: A Review

Srikantaiah

DasGupta

2012

IETE Tech Rev

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In this paper, the quantum mechanical (QM) effects in bulk MOSFETs and their modeling approaches in the compact modeling framework are reviewed. As the device dimensions are scaled to the sub-100 nm range, QM effects affect the device properties, such as effective oxide thickness, inversion layer charge density and profile, threshold voltage, effective bandgap, gate capacitance, mobility, surface potential, subthreshold characteristics, drain current, and gate leakage current. The classical theory is no longer sufficient for accurate modeling of these device characteristics. In this paper, models which have incorporated QM effects to obtain the device characteristics are discussed and compared. The roles of QM effects in affecting some of the device properties are also presented. KeywordsBulk MOSFETs, Quantum mechanical effect, Review on compact modeling. ( ) , which is used to solve eqn. (1) by numerical methods. Only certain energy levels, denoted by E ij , satisfy the Schrödinger equation and correspond to the energy levels of the sub-bands. Here, i=L for the lower valley and i=H for the higher valley, while j=0, 1, 2, 3…, corresponds the sub-band number. The electron concentration n y IETE TECHNICAL REVIEW | VOL 29 | ISSUE 1 | JAN-FEB 2012 AUTHORS Jayadeva Gowrapura Srikantaiah received the B.E. degree in electronics and communication engineering from NMAM Institute of Technology, Nitte, in 1990, M.Tech degree in digital electronics and advanced communication from the Karnataka Regional Engineering College, Surathkal (Present NITK), in 1995, both were affiliated to Mangalore University, India and Ph.D degree from I.I.T. Madras in 2010. His Ph.D. dissertation was on analytical models incorporating quantum mechanical effects for short n-channel MOSFETS. He joined as a lecturer in NMAM Institute of Technology, Nitte, in 1990 and later as Assistant Professor at JNNCE Shimoga in 1998. He has been a Faculty member in the department of electronics and communication engineering, Nagarjuna College of Engineering and Technology, Bangalore, since September 2010 and is currently a Professor and Head. His research interests are modeling and simulation of bulk and SOI MOSFETs including quantum mechanical effects and low power VLSI design.

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Small signal electron charge centroid model for quantization of inversion layer in a metal-on-insulator field-effect transistor

Cited by 10 publications

References 6 publications

Robust Ultrathin Oxynitride with High Nitrogen Diffusion Barrier near its Surface Formed by NH₃ Nitridation of Chemical Oxide and Reoxidation with O₂

Robust Ultrathin Oxynitride with High Nitrogen Diffusion Barrier near its Surface Formed by NH₃ Nitridation of Chemical Oxide and Reoxidation with O₂

Optimization of sub-5-nm multiple-thickness gate oxide formed by oxygen implantation

Quantum Mechanical Effects in Bulk MOSFETs from a Compact Modeling Perspective: A Review

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Small signal electron charge centroid model for quantization of inversion layer in a metal-on-insulator field-effect transistor

Cited by 10 publications

References 6 publications

Robust Ultrathin Oxynitride with High Nitrogen Diffusion Barrier near its Surface Formed by NH3 Nitridation of Chemical Oxide and Reoxidation with O2

Robust Ultrathin Oxynitride with High Nitrogen Diffusion Barrier near its Surface Formed by NH3 Nitridation of Chemical Oxide and Reoxidation with O2

Optimization of sub-5-nm multiple-thickness gate oxide formed by oxygen implantation

Quantum Mechanical Effects in Bulk MOSFETs from a Compact Modeling Perspective: A Review

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Product

Resources

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Robust Ultrathin Oxynitride with High Nitrogen Diffusion Barrier near its Surface Formed by NH₃ Nitridation of Chemical Oxide and Reoxidation with O₂

Robust Ultrathin Oxynitride with High Nitrogen Diffusion Barrier near its Surface Formed by NH₃ Nitridation of Chemical Oxide and Reoxidation with O₂