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A simulator using the coupled Schr ödinger equation, the Poisson equation and Fermi-Dirac statistics to analyse inversion-layer quantization has been shown to match the measured C -V data of thin-gate-oxide metal-oxide semiconductor (MOS) capacitors closely. This simulator is used to study in detail the effects of bias voltage, oxide thickness and doping concentration on the charge centroid and from this a simple empirical model for the dc charge centroid of the inversion layer is proposed. This model predicts the inversion charge density in terms of T ox , V t and V g explicitly and can be used to estimate transistor current in device engineering and circuit simulation models.

A simulator using a coupled Schrödinger equation, Poisson equation and Fermi–Dirac statistics to analyze inversion layer quantization is shown to match the measured capacitance versus voltage data of thin oxide gate metal-on-insulator capacitance closely. The effects of bias voltage, oxide thickness and doping concentration on the charge centroid are presented. A simple empirical model for the alternating current charge centroid of the inversion layer is proposed. This model predicts the in-version layer capacitance or charge centroid in terms of Tox (oxide thickness), Vt (threshold voltage), and Vg (gate voltage) explicitly.

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